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Browsing by Author "Mankelevich, Y.A."

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    1-D model of OSG low-k films modification by EUV/VUV emission

    Rakhimova, T.V.
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    Rakhimov, A.T.
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    Mankelevich, Y.A.
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    Lopaev, D.V.
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    Ziryanov, S.M.
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    Kovalev, A.S.
    Meeting abstract
    2013, Plasma Etch and Strip in Microtechnology - PESM, 14/03/2013
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    Low-k films modification under EUV and VUV radiation

    Rakhimova, T.
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    Rakhimov, A.
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    Mankelevich, Y.A.
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    Lopaev, D.V.
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    Kovalev, A.S.
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    Vasil'eva, A.N.
    Journal article
    2014, Journal of Physics D: Applied Physics, (47) 2, p.25102
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    Recombination of O and H atoms with low-k SiOCH films pretreated in He plasma

    Baklanov, Mikhaïl
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    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Mankelevich, Y.A.
    Proceedings paper
    2009, Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics, 14/04/2009, p.1156-D01-06
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    Recombination probabilities of O and H atoms on the surface of nanoporous low dielectric constant SiCOH films

    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Malykhin, E.M.
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    Mankelevich, Y.A.
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    Rakhimova, T.V.
    Proceedings paper
    2009, Advanced Metallization Conference 2008 (AMC 2008), 8/10/2008, p.573-579
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    Recombination probabilities of O and H atoms on the surface of nanoporous Low-k SiCOH dielectrics

    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Malykhin, E.M.
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    Mankelevich, Y.A.
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    Rakhimova, T.V.
    Meeting abstract
    2008, ADMETA: Advanced Metallization Conference, 8/10/2008, p.38-39
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    The effect of He plasma treatment on properties of organosilicate glass low-k films

    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Malykhin, E.M.
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    Mankelevich, Y.A.
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    Proshina, O.V.
    Journal article
    2011, Journal of Applied Physics, (109) 4, p.43303
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    The influence of He plasma pretreatment on O and H atom interaction with low-k nanoporous materials

    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Malykhin, E.M.
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    Mankelevich, Y.A.
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    Rakhimova, T.V.
    Proceedings paper
    2009, 62nd Annual Gaseous Electronics Conference - GEC, 20/10/2009
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    The mechanism of low-k SiOCH film modification by oxygen atoms

    Braginsky, O.V.
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    Kovalev, A.S.
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    Lopaev, D.V.
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    Malykhin, E.M.
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    Mankelevich, Y.A.
    ;
    Rakhimova, T.V.
    Journal article
    2010, Journal of Applied Physics, (108) 7, p.73303

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