Browsing by Author "Martino, Joao Antonio"
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Publication A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K
Journal article1995, Solid-State Electronics, (38) 10, p.1799-1803Publication A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Proceedings paper2000, Proceedings of the 3rd IEEE International Caracas Conference on Devices, Circuits and Systems - ICCDCS, 15/03/2000, p.D45/1-1-D45/5Publication A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
Oral presentation2000, 1st Latin American Test Workshop; March 2000; Rio de Janeiro, Brasil.Publication A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
Proceedings paper2001, XVI SBMicro. International Conference on Microelectronics and Packaging, 10/09/2001, p.23-27Publication A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET
Oral presentation1999, XIV International Conference on Microelectronics and Packaging - ICMPPublication Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Journal article2016, Semiconductor Science and Technology, (31) 12, p.124001Publication Analog performance of vertical nanowireTFETs as a function of temperature and transport mechanism
Publication Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance
Oral presentation1999, ICMP; August 1999; Campinas, Brazil.Publication Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs
Journal article2007, Solid-State Electronics, (51) 9, p.1194-1200Publication Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K
Journal article1998, Journal de Physique IV, 8, p.3-25-28Publication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Oral presentation1998, NATO Advanced Research Workshop on "Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices"; 12-15 OctobePublication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Proceedings paper2000, Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices, 12/10/1998, p.187-193Publication Behavior of triple-gate bulk FinFETs with and without DTMOS operation
Journal article2012, Solid-State Electronics, (71) 1, p.63-68Publication Combined Delta L and series resistance extraction of LDD MOSFETs at 77K
Proceedings paper1995, Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity, 21/05/1995, p.290-296Publication Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
Journal article2016, Solid-State Electronics, 123, p.124-129Publication Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 degrees C
Journal article2021, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (36) 9Publication Effective hole mobility and low-frequency noise characterization of strained Ge pFinFETs
Proceedings paper2016, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - ULIS, 25/01/2016Publication Experimental study of MISHEMT from 450 K down to 200 K for analog applications
Journal article2023, SOLID-STATE ELECTRONICS, (208) October, p.Art. 108742Publication Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs
Proceedings paper1996, Proceedings of the 7th International Symposium on Silicon-on-Insulator Technology and Devices, 5/05/1996, p.309-317Publication Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Journal article2000, Solid-State Electronics, (44) 4, p.677-684
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