Browsing by Author "Nafria, Montserrat"

A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs

Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach

Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents

Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors

Emerging yield and reliability challenges in nanometer CMOS technologies

Experimental characterization of NBTI effect on pMOSFET and CMOS inverter

Improved characterization of high-k degradation with vacuum C-AFM

Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics

Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Nanoscale effects of annealing on the electrical characteristic of hafnium based devices measured in a vacuum environment

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

Stochastic piecewise modeling of post-BD gate current oriented to circuit design