Browsing by Author "Nicolett, A. S."
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Publication A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Proceedings paper2000, Proceedings of the 3rd IEEE International Caracas Conference on Devices, Circuits and Systems - ICCDCS, 15/03/2000, p.D45/1-1-D45/5Publication A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
Oral presentation2000, 1st Latin American Test Workshop; March 2000; Rio de Janeiro, Brasil.Publication A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
Proceedings paper2001, XVI SBMicro. International Conference on Microelectronics and Packaging, 10/09/2001, p.23-27Publication A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET
Oral presentation1999, XIV International Conference on Microelectronics and Packaging - ICMPPublication Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance
Oral presentation1999, ICMP; August 1999; Campinas, Brazil.Publication Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K
Journal article1998, Journal de Physique IV, 8, p.3-25-28Publication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Proceedings paper2000, Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices, 12/10/1998, p.187-193Publication Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K
Oral presentation1998, NATO Advanced Research Workshop on "Perspectives, Sciences and Technologies of Novel Silicon-on-Insulator Devices"; 12-15 OctobePublication Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Journal article2000, Solid-State Electronics, (44) 4, p.677-684Publication Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
Proceedings paper2001, Silicon-on-Insulator Technology and Devices X. Proceedings of the 10th Symposium, p.85-90Publication Extraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence
Proceedings paper2000, Proceedings of the XV SBmicro International Conference on Microelectronics and Packaging, 18/09/2000, p.103-107Publication Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
Proceedings paper1996, Proceedings XI Conference of the Brazilian Microelectronics Society - SBμ, 29/07/1996, p.301-306Publication Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
Journal article1997, Journal of Solid-State Devices and Circuits, (5) 1, p.1-4Publication Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K
Journal article1996, Journal de Physique IV. Colloque 3, 6, p.C3-55-C3-59Publication Simple method to extract the length dependent mobility degradation factor at 77 K
Proceedings paper1997, Proceedings of the 4th Symposium on Low Temperature Electronics and High Temperature Superconductivity, 4/05/1997, p.159-170Publication Simultaneous extraction of the silicon film and front oxide thickness on fully depleted SOI nMOSFETs
Journal article2000, Solid-State Electronics, (44) 11, p.1961-1969