Browsing by Author "Pagès, Xavier"
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Publication A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.261-266Publication Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Journal article2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783Publication CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.15-22Publication Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth
Journal article2005, Applied Physics Letters, (86) 10, p.101913Publication Integration of low and high temperature junction anneals for 45nm CMOS
Proceedings paper2004, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 9/05/2004, p.145-156Publication Leakage optimatisation of ultra-shallow junctions formed by solid phase epitaxial regrowth (SPER)
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.65-72Publication Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
Journal article2004, Journal of Vacuum Science and Technology B, (22) 1, p.306-311Publication Ni-based silicides for 45 nm CMOS and beyond
Journal article2004, Materials Science and Engineering B, 114-115, p.29-41Publication Pre-amorphization and co-implantation suitability for advanced PMOS devices integration
; ; ; Dachs, CharlesProceedings paper2003, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, 16/09/2003, p.740-741Publication SPER junction optimisation in 45nm CMOS devices
Meeting abstract2004, Extended Abstracts of the 4th International Workshop on Junction Technology, 15/03/2004, p.70-75Publication The effect of ramp rate - short process time and partial reactions on Cobalt and Nickel silicide formation
Proceedings paper2004, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 9/05/2004, p.174-182Publication The role of fluorine with Ge pre-amorphisation in forming PMOS junctions for the 65-nm CMOS technology node
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS Devices, p.99-104