Browsing by Author "Rodrigues, M."

Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures

Analog parameters of MuGFET devices with different source/drain engineering

Analog performance of SOI FinFETs with different TiN gate electrode thickness

Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics

BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications

Fin pitch impact on biaxial/uniaxial strain engineering of triple-gate devices

Gate stack influence on GIFBE in nFinFETs

Gate stack influence on GIFBE in nFinFETs

GIDL behavior in UTBOX SOI devices with high-k/metal gate stacks

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Larger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film

Lateral bipolar transistor current gain behavior of MuGFET deviceswith different source/drain engineering

Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs

SOI n- and pMuGFET devices with different TiN metal gate tThickness under influence of sidewall crystal orientation

TiN/HfSiON for analog applications of nMuGFETs

UTBOX SOI devices with high-k gate dielectric under analog performance