Browsing by Author "Rodriguez, Rosana"
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Publication An equivalent circuit model for the recovery component of BTI
Proceedings paper2008-09, 38th European Solid-State Device Research Conference - ESSDERC, 15/09/2008, p.55-58Publication Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Proceedings paper2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023Publication Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Publication Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
Publication Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators
Journal article2012, IEEE Transactions on Device and Materials Reliability, (12) 1, p.78-85Publication Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents
Proceedings paper2009-02, Spanish Conference on Electron Devices - CDE, 11/02/2009, p.156-159Publication Experimental characterization of NBTI effect on pMOSFET and CMOS inverter
Proceedings paper2009-02, Spanish Conference on Electron Devices - CDE, 11/02/2009, p.231-233Publication Probabilistic defect occupancy model for NBTI
Proceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.920-925Publication Processing dependences of CHC degradation on strained-Si pMOSFETs
Publication SPICE modelling of hot-carrier degradation in Si1–xGex S/D and HfSiON based pMOS transistors
Journal article2010, Microelectronics Reliability, (50) 9_11, p.1263-1266Publication Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
Publication Stochastic piecewise modeling of post-BD gate current oriented to circuit design
Oral presentation2008, ESSDERC Fringe Poster Session