Browsing by Author "Rossetto, Isabella"

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Gate stability of GaN-based HEMTs with p-type gate

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation

Reliability and parasitic issues in GaN-based power HEMTs

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate