Browsing by Author "San Andres Serrano, Enrique"
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Publication A reliable metric for mobility extraction of short channel MOSFETs
Journal article2007, IEEE Transaction Electron Devices, (54) 10, p.2690-2698Publication Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
Journal article2007, IEEE Trans. Electron Devices, (54) 7, p.1705-1712Publication Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.32-33Publication Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection
Journal article2007, Microelectronic Engineering, (84) 9_10, p.1943-1946Publication High-k characterization by RFCV
Proceedings paper2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.363-376Publication Line width dependent mobility in high-k – a comparative performance study between FUSI and TiN
Proceedings paper2007, International Symposium on VLSI Technology, Systems, and Applications - VLSI-TSA, 23/05/2007, p.38-39Publication Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN
Journal article2007, Microelectronic Engineering, (84) 9_10, p.1878-1881Publication Negligible effect of process-induced strain on intrinsic NBTI behavior
Journal article2007, IEEE Electron Device Letters, (28) 3, p.242-244Publication Performance assessment of (110) p-FET high-k/MG: is it mobility or series resistance limited?
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2058-2062