Browsing by Author "Saripalli, Yoga"
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Publication 200mm GaN-on-Si epitaxy and e-mode device technology
Proceedings paper2015, International Electron Devices Meeting - IEDM, 7/12/2015, p.16.2Publication AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Journal article2014, Physica Status Solidi C, (11) 3_4, p.450-453Publication Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements
Publication Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Meeting abstract2014, International Workshop on Nitride Semiconductors - IWN, 24/08/2014Publication Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Meeting abstract2015, 20th American Conf on Crystal Growth and Epitaxy - ACCGE-20, 1/08/2015Publication Gallium nitride epitaxy on large area silicon substrates for power and optoelectronic applications
Publication GaN-on-Si process defect detection and analysis for HB-LEDs and power devices
Proceedings paper2013, 24th Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC, 13/05/2013, p.371-374Publication Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Meeting abstract2016, DGKK-Workshop, 8/12/2016Publication Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Meeting abstract2016, International Workshop on Nitride Semiconductors - IWN, 2/10/2016Publication Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Meeting abstract2013, 10th International Conference on Nitride Semiconductors, 25/08/2013Publication Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Journal article2014, Physica Status Solidi C, (11) 3_4, p.446-449Publication Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Proceedings paper2016, 58th Electronic Materials Conference - EMC, 22/06/2016Publication Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Journal article2016, Journal of Electronic Materials, (45) 12, p.6346-6354Publication Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Meeting abstract2014, 17th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XVII, 13/07/2014, p.Mon-Oral-1-1Publication Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
Journal article2014, Physica Status Solidi C, (11) 3_4, p.533-536Publication Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Proceedings paper2016, 28th IEEE International Symposium on Power Semiconductor Devices and ICs - ISPSD, 12/06/2016, p.95-98Publication MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)
Meeting abstract2016, 18th International Conference on Metal Organic Vapor Phase Epitaxy - MOVPE, 10/07/2016Publication MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Meeting abstract2015, 11th International Conference on Nitride Semiconductors - ICNS-11, 30/08/2015, p.TuEO89Publication MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Journal article2016, Physica Status Solidi C, (13) 5_6, p.311-316Publication MOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon