Browsing by Author "Stoffels, Steve"

200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration

3-D device electrothermal simulation for analysis of multifinger power HEMTs

A flat-panel-display compatible ultrasound platform

A modeling and experimental method for accurate thermal analysis of AlGan/GaN HEMT power-bars

A novel gap narrowing process for creating high aspect ratio transduction gaps for MEM HF resonators

A novel gap narrowing process for creating high aspect ratio transduction gaps for MEM HF resonators

AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

Architecture choice for radiation-hard AlGaN/GaN HEMT power devices

Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance

Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics

Breakdown investigation in GaN-based MIS-HEMT devices

Circular MEM resonator: modeling second order effects on resonance frequency

CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate