Browsing by Author "Vantomme, Andre"
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Publication A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates
Meeting abstract2002, B-ALD-5: The 5th Baltic Symposium on Atomic Layer Deposition, 24/10/2002, p.21Publication Advanced characterization of high-K materials: a nuclear approach
Journal article2002, Nuclear Instruments & Methods in Physics Research B, 190, p.505-509Publication ALD on high mobility channels: engineering the proper gate stack passivation
Meeting abstract2010, 218th ECS Meeting Symposium ' Atomic Layer Deposition Applications 6', 10/10/2010, p.1401Publication ALD on high mobility channels: engineering the proper gate stack passivation
Proceedings paper2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.9-23Publication ARIBA: a combined analysis set-up for high resolution RBS and TOF-ERDA for thin film analysis
Oral presentation2004, 8th European Conference on Accelerators in Applied Research and TechnologyPublication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1909Publication Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Journal article2011, Journal of the Electrochemical Society, (158) 7, p.H687-H692Publication B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts
; ; ; ; ; Journal article2022, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, (11) 2, p.Art. 024008Publication Backscattering/channeling study of high dose rare-earth implants in Si
Oral presentation1997, International Conference on Ion Beam Analysis - IBA; July 1997; Lisboa, Portugal.Publication Backscattering/channeling study of high-dose rare-earth implants into Si
Journal article1998, Nuclear Instruments and Methods. B, 138, p.471-477Publication Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Proceedings paper2013-06, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.65-66Publication Calibration of PIXE yields using binary thin films on Si
Journal article2014, Nuclear Instruments and Methods in Physics Research B, 331, p.65-68Publication Calibration of PIXE yields using binary thin films on Si
Oral presentation2013, 11th European Conference on Accelerators in Applied Research and Technology - ECAARTPublication Calibration of PIXE yields using Cu as a reference
Journal article2017, Nuclear Instruments and Methods in Physics Research B, (406) A, p.115-118Publication Channeled ion beam synthesis: a new technique to form epitaxial rare-earth silicides with high quality
Oral presentation1996, Chinese Materials Research Conference; November 17-20, 1996; Beijing, China.Publication Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
; ; Langouche, H.Journal article1996, Nuclear Instruments and Methods in Physics Research B, (120) 1_4, p.190-7Publication Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Oral presentation1996, IBMM'96 - Ion beam modification of materials; 1996;Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Journal article2011, Microelectronic Engineering, (88) 4, p.342-346Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Meeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials, 7/06/2010