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Browsing by Author "Xu, Mingwei"

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    A simple method for automated extraction of BJT thermal resistance form early voltage measurements

    Sadovnikov, A.
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    Krakowski, T.
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    Greig, W.
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    Xu, Mingwei
    Proceedings paper
    2003-11, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003
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    Active laser characterization by scanning capacitance microscopy

    Xu, Mingwei
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    Duhayon, Natasja  
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    Vandervorst, Wilfried  
    Proceedings paper
    2002, GaAs-MANTECH Conference. Digest of Papers, 8/04/2002, p.173-175
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    Applications of Scanning Spreading Resistance Microscopy on InP-Based Materials and Devices

    Xu, Mingwei
    PHD thesis
    2005-04
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    Carrier spilling revisited: on-bevel junction behavior of different electrical depth profiling techniques

    Clarysse, Trudo
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    Eyben, Pierre  
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    Duhayon, Natasja  
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    Xu, Mingwei
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    Vandervorst, Wilfried  
    Journal article
    2003, Journal of Vacuum Science and Technology B, (21) 2, p.729-736
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    Carrier spilling revisited: the on-bevel junction behavior of different electrical depth profiling techniques

    Clarysse, Trudo
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    Eyben, Pierre  
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    Duhayon, Natasja  
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    Xu, Mingwei
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    Vandervorst, Wilfried  
    Meeting abstract
    2001, 6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - USJ, 22/04/2001, p.335
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    Characterization of vertical RESURF diodes using scanning probe microscopy

    Duhayon, Natasja  
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    Xu, Mingwei
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    Vandervorst, Wilfried  
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    Hellemans, L.
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    Rochefort, Christelle
    Journal article
    2003, Materials Science and Engineering B, (102) 1_3, p.143-147
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    Characterization of vertical resurf diodes using scanning probe microsopy

    Duhayon, Natasja  
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    Xu, Mingwei
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    Alvarez, David
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    Eyben, Pierre  
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    Vandervorst, Wilfried  
    Oral presentation
    2002, E-MRS Spring Meeting Symposium E: Advanced Characterisation of Semiconductor Materials and Devices
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    Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions

    Sibaja-Hernandez, Arturo  
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    Xu, Mingwei
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    Decoutere, Stefaan  
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    Maes, Herman
    Proceedings paper
    2004-05, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 16/05/2004, p.234-235
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    Fabrication of conductive atomic force microscope probes and their evaluation for carrier mapping

    Fouchier, Marc
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    Eyben, Pierre  
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    Alvarez, David
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    Duhayon, Natasja  
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    Xu, Mingwei
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    Brongersma, Sywert  
    Proceedings paper
    2003-05, Smart Sensors, Actuators, and MEMS, 19/05/2003, p.607-616
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    High resolution dopant/carrier profiling for deep submicron technologies

    Vandervorst, Wilfried  
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    Clarysse, Trudo
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    De Wolf, Peter
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    Eyben, Pierre  
    ;
    Haegeman, Bart
    Oral presentation
    1999, 9th Canadian Semiconductor Technology Conference; July 1999; Ottawa, Canada.
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    High resolution electrical characterization of laterally overgrown epitaxial InP

    Anand, S.
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    Sun, Y.T.
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    Lourdudoss, S.
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    Xu, Mingwei
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    Vandervorst, Wilfried  
    Proceedings paper
    2003, 15th International Conference on Indium Phosphide and Related Materials - IPRM, 12/05/2003, p.563-566
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    HRXRD analysis of SiGeC layers for BiCMOS applications

    Haralson, Erik
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    Sibaja-Hernandez, Arturo  
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    Xu, Mingwei
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    Malm, Gunnar
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    Radamson, Henry
    Proceedings paper
    2004, SiGe: Materials, Processing and Devices. Proceedings of the 1st International Symposium, 3/10/2004, p.135-142
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    Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology

    Van Huylenbroeck, Stefaan  
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    Sibaja-Hernandez, Arturo  
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    Piontek, Andreas
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    Choi, Li Jen
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    Xu, Mingwei
    Proceedings paper
    2004-09, Proceedings of the 2004 IEEE Bipolar/Bicmos Circuits and Technology Meeting - BTCM, 13/09/2004, p.229-232
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    Nanometer scale carrier profiling with scanning probes

    Vandervorst, Wilfried  
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    Eyben, Pierre  
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    Duhayon, Natasja  
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    Hantschel, Thomas  
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    Xu, Mingwei
    Oral presentation
    2001, 7th Microscopy of Semiconductor Materials Conference; 2001; Oxford, UK.
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    Nanometer scale characterization of deep submicron devices

    Vandervorst, Wilfried  
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    Clarysse, Trudo
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    De Wolf, Peter
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    Eyben, Pierre  
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    Haegeman, Bart
    Oral presentation
    1999, Materials Research Society Spring Meeting: Symposium S on Si Front-End Processing - Physics and Technology of Dopant-Defect Inte
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    Nanometer scale characterization of deep submicron devices

    Vandervorst, Wilfried  
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    Clarysse, Trudo
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    Duhayon, Natasja  
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    Eyben, Pierre  
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    Hantschel, Thomas  
    Oral presentation
    2000, 2nd International Scanning Probe Symposium; 2000; Hamburg, Germany.
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    Nanometer scale characterization of ULSI devices using scanning probes

    Vandervorst, Wilfried  
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    Eyben, Pierre  
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    Clarysse, Trudo
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    Duhayon, Natasja  
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    Xu, Mingwei
    Oral presentation
    2000, Journées de la Nanotechnolgy; 5-6 July 2000; Orsay, France.
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    Nm-scale characterization of deep submicron devices using scanning probes

    Vandervorst, Wilfried  
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    Duhayon, Natasja  
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    Eyben, Pierre  
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    Xu, Mingwei
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    Clarysse, Trudo
    Oral presentation
    2001, Conference on Microscopy; 28 March 2001; Oxford, UK.
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    Probing local electrical properties in semiconductors with nanometer resolution

    Vandervorst, Wilfried  
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    Duhayon, Natasja  
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    Eyben, Pierre  
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    Alvarez, David
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    Xu, Mingwei
    Oral presentation
    2003, WOG Studiedag Scanning Probes
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    Probing semiconductor technology and devices with scanning spreading resistance microscopy

    Eyben, Pierre  
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    Vandervorst, Wilfried  
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    Alvarez, David
    ;
    Xu, Mingwei
    ;
    Fouchier, Marc
    Book chapter
    2007
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