Browsing by Author "Zhang, E.X."
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Publication Charge collection mechanisms of Ge-channel bulk pMOSFETs
Publication Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
Publication Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Proceedings paper2014, Aerospace Conference, 1/03/2014Publication Efficient reliability testing of emerging memory technologies using multiple radiation sources
Publication Geometry dependence of total dose effects in bulk FINFETs
Publication Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
Publication Heavy ion and laser-induced transients in SiGe channel pMOSFETs
Publication Interface and border traps in Ge pMOSFETs
Meeting abstract2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2637Publication Laser- and heavy ion-induced charge collection in bulk FinFETs
Publication Laser-induced current transients in bulk FinFETs
Publication Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics
Meeting abstract2013, 44th IEEE Semcionductor Interface Specialists Conference - SISC, 5/12/2013Publication Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.882-885Publication Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
Publication TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories
Publication Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Publication Total-dose-irradiation and annealing responses of Ge-pMOSFETs
Oral presentation2010, IEEE Nuclear and Space Radiation Effects Conference - NSRECPublication Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
Publication Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Oral presentation2012, IEEE Nuclear and Space Radiation Effects Conference - NSRECPublication Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors