Browsing by author "Schrimpf, R.D."
Now showing items 1-17 of 17
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Charge collection mechanisms of Ge-channel bulk pMOSFETs
Samsel, Isaak; Zhang, E.X.; Sternberg, A.L.; Ni, K.; Reed, Robert; Fleedwood, Daniel; Alles, M.L.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine (2015) -
Efficient reliability testing of emerging memory technologies using multiple radiation sources
Bennet, W.G.; Hooten, N.C.; Weeded-Wright, S.; Schrimpf, R.D.; Reed, R.A.; Alles, M.C.; Zhang, E.X.; Mc Curdy, M.W.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
Zhang, E.X.; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, E.D.; Kai, N.; Ball, D.R.; McCurdy, M.W.; Fleetwood, D.M.; Reed, R.A.; Alles, M.C.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome (2014) -
Heavy ion and laser-induced transients in SiGe channel pMOSFETs
Zhang, E.X.; Samsel, I.K.; Bennett, W.G.; Hooten, N.C.; McCurdy, M.; Fleetwood, D.M.; Reed, R.A.; Alles, M.L.; Schrimpf, R.D.; Weller, R.A.; Linten, Dimitri; Mitard, Jerome (2013) -
Heavy-ion-induced current transients in bulk and SOI FinFETs
El-Mamouni, F.; Zhang, X.; Ball, D.R.; Sierawski, B.; King, M.P.; Schrimpf, R.D.; Reed, R.A.; Alles, M.L.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Vizkelethy, G. (2012) -
Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Mahatme, N.; Zhang, E.; Reed, R.A.; Bhuva, B.L.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Griffoni, Alessio; Aoulaiche, Marc; Jurczak, Gosia; Groeseneken, Guido (2012) -
Laser- and heavy ion-induced charge collection in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Pate, N.D.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor; Griffoni, Alessio; Linten, Dimitri; Vizkelethy, G. (2011) -
Laser-induced current transients in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Hooten, N.; Schrimpf, R.D.; Reed, R.; Galloway, K.F.; McMarrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor (2011) -
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
El-Mamouni, F.; Zhang, E.X.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Simoen, Eddy; Claeys, Cor; Cristoloveanu, S.; Xiong, W. (2011) -
Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Simoen, Eddy; Put, Sofie; Van Uffelen, Nick; Leroux, P.; Claeys, Cor; Ohyama, H.; Kulkarni, R.; Schrimpf, R.D.; Galloway, K.F. (2008) -
Radiation hardness aspects of advanced FinFET and UTBOX devices
Claeys, Cor; Aoulaiche, Marc; Simoen, Eddy; Griffoni, Alessio; Kobayashi, D.; Mahatme, N.N.; Reed, R.A.; Schrimpf, R.D.; Agopian, P.G.D.; Martino, J.A. (2012) -
TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories
Weeden-Wright, S.L.; Bennett, W.G.; Hooten, N.C.; Zhang, E.X.; McCurdy, M.W.; Schrimpf, R.D.; Reed, R.A.; Weller,; Fleetwood,; Alles, M.C.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio
Kulkarni, S.R.; Schrimpf, R.D.; Galloway, K.F.; Claeys, Cor; Simoen, Eddy (2008) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015) -
Total ionizing dose effects on Ge pMOSFETs with high-k gate stack: on/off current ratio
Kulkarni, S.R.; Schrimpf, R.D.; Galloway, K.F.; Arora, R.; Claeys, Cor; Simoen, Eddy (2009) -
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
Gorchichko, M.; Cao, Y.; Zhang, E.X.; Yan, D.; Gong, H.; Zhao, S.E.; Wang, P.; Jiang, R.; Liang, C.; Fleedwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Linten, Dimitri (2020) -
Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Mahatme, Nihaar; Zhang, E.X.; Linten, Dimitri; Griffoni, A.; Aoulaiche, Marc; Simoen, Eddy; Jurczak, Gosia; Bhuva, B.L.; Reed, R.A.; Schrimpf, R.D.; Fleetwood, D.M.; Groeseneken, Guido (2012)