Browsing by author "Simicic, Marko"
Now showing items 1-20 of 45
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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A fully-integrated method for RTN parameter extraction
Simicic, Marko; Morrison, Sebastien; Parvais, Bertrand; Weckx, Pieter; Kaczer, Ben; Sawada, Ken; Ammo, Hiroaki; Yamakawa, Shinya; Nomoto, Kazuki; Ono, Makoto; Linten, Dimitri; Verkest, Diederik; Wambacq, Piet; Groeseneken, Guido; Gielen, Georges (2017) -
Benchmarking time-dependent variability of junctionless nanowire FETs
Kaczer, Ben; Rzepa, G.; Franco, Jacopo; Weckx, Pieter; Vaisman Chasin, Adrian; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Roussel, Philippe; Hellings, Geert; Veloso, Anabela; Matagne, Philippe; Grasser, T.; Linten, Dimitri (2017) -
Calibration and modeling of LICCDM setups
Simicic, Marko; Wu, Wei-Min; Tamura, Shinichi; Shimada, Yohei; Sawada, Masanori; Chen, Shih-Hung (2021) -
CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies
Chen, Shih-Hung; Linten, Dimitri; Hellings, Geert; Simicic, Marko; Kaczer, Ben; Chiarella, Thomas; Mertens, Hans; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto (2019) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Characterization and simulation methodology for time-dependent variability in advanced technologies
Weckx, Pieter; Kaczer, Ben; Raghavan, Praveen; Franco, Jacopo; Simicic, Marko; Roussel, Philippe; Linten, Dimitri; Thean, Aaron; Verkest, Diederik; Catthoor, Francky; Groeseneken, Guido (2015) -
Comparative experimental analysis of time-dependent variability using a transistor test array
Simicic, Marko; Subirats, Alexandre; Weckx, Pieter; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido; Gielen, Georges (2016) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
Concise analytical expression for Wunsch-Bell 1-D pulsed heating and applications in ESD using TLP
Hellings, Geert; Roussel, Philippe; Wang, Nian; Boschke, Roman; Chen, Shih-Hung; Simicic, Marko; Scholz, Mirko; Steudel, Soeren; Myny, Kris; Linten, Dimitri; Hellings, Paul; Ashif, Nowab (2019) -
Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials
Kim, Yeonsu; Kaczer, Ben; Verreck, Devin; Grill, Alexander; Kim, Doyoon; Song, Jaeick; Diaz Fortuny, Javier; Vici, Andrea; Park, Jongseon; Van Beek, Simon; Simicic, Marko; Bury, Erik; Vaisman Chasin, Adrian; Linten, Dimitri; Lee, Jaewoo; Chun, Jungu; Kim, Seongji; Seo, Beumgeun; Choi, Junhee; Shim, Joon Hyung; Lee, Kookjin; Kim, Gyu-Tae (2021) -
Defect-based compact modeling for RTN and BTI variability
Weckx, Pieter; Simicic, Marko; Nomoto, Kazuki; Ono, Makoto; Parvais, Bertrand; Kaczer, Ben; Raghavan, Praveen; Linten, Dimitri; Sawada, Ken; Ammo, Hiroaki; Yamakawa, Shinya; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda (2017) -
Defect-Based Compact Modeling of Random Telegraph Noise
Weckx, Pieter; Kaczer, Ben; Simicic, Marko; Parvais, Bertrand; Linten, Dimitri (2020) -
Degradation mechanisms in Germanium Electro-Absorption Modulators
Tsiara, Artemisia; Lesniewska, Alicja; Roussel, Philippe; Srinivasan, Ashwyn; Berciano, Mathias; Simicic, Marko; Pantouvaki, Marianna; Van Campenhout, Joris; Croes, Kristof (2022) -
Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
Simicic, Marko; Ashif, Nowab Reza; Hellings, Geert; Chen, Shih-Hung; Nag, Manoj; Kronemeijer, Auke Jisk; Myny, Kris; Linten, Dimitri (2020-04-03) -
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology
Simicic, Marko; Hellings, Geert; Chen, Shih-Hung; Horiguchi, Naoto; Linten, Dimitri (2018) -
ESD mitigation for 3D IC hybrid bonding
Lin, Shih-Hsiang; Simicic, Marko; Pantano, Nicolas; Chen, Shih-Hung; Roussel, Philippe; Van der Plas, Geert; Beyne, Eric; Wambacq, Piet (2023) -
ESD performance comparison of superlattice I/O FinFET and horizontal nanowire devices
Simicic, Marko; Chen, Shih-Hung; Hellings, Geert; Linten, Dimitri (2018) -
ESD process assessment of 2.5D and 3D bonding technologies
Simicic, Marko; Gijbels, Frank; Iacovo, Serena; Chen, Shih-Hung; Van der Plas, Geert; Beyne, Eric (2023) -
ESD protection diodes in sub-5nm gate-all-around nanosheet technologies
Chen, Shih-Hung; Veloso, Anabela; Mertens, Hans; Hellings, Geert; Simicic, Marko; Chen, Wen Chieh; Wu, Wei-Min; Serbulova, Kateryna; Linten, Dimitri; Horiguchi, Naoto (2020)