Browsing by author "Eyben, Pierre"
Now showing items 1-20 of 217
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
3D electrical characterization of CNT-based interconnects
Schulze, Andreas; Hantschel, Thomas; Dathe, Andre; Chiodarelli, Nicolo; Eyben, Pierre; Vandervorst, Wilfried (2011) -
3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors
Eyben, Pierre; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Veloso, Anabela; Mertens, Hans; Pena, Vanessa; Santoro, Gaetano; Machillot, Jerome; Kim, Myungsun; Miyashita, Toshihiko; Yoshida, Naomi; Bender, Hugo; Richard, Olivier; Celano, Umberto; Paredis, Kristof; Wouters, Lennaert; Mitard, Jerome; Horiguchi, Naoto (2019) -
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Mody, Jay; Zschaetzsch, Gerd; Koelling, Sebastian; De Keersgieter, An; Eneman, Geert; Kambham, Ajay Kumar; Drijbooms, Chris; Schulze, Andreas; Chiarella, Thomas; Horiguchi, Naoto; Hoffmann, Thomas; Eyben, Pierre; Vandervorst, Wilfried (2011) -
3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions
Vandervorst, Wilfried; Schulze, Andreas; Eyben, Pierre; Zschaetzsch, Gerd; Koelling, Sebastian; Kumar, Arul; Mody, Jay; Gilbert, Matthieu (2011) -
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Mitard, Jerome; Witters, Liesbeth; Eneman, Geert; Hellings, Geert; Pantisano, Luigi; Hikavyy, Andriy; Loo, Roger; Eyben, Pierre; Horiguchi, Naoto; Thean, Aaron (2012) -
A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications
Schulze, Andreas; Verhulst, Anne; Nazir, Aftab; Hantschel, Thomas; Eyben, Pierre; Vandervorst, Wilfried (2013) -
A detailed study of SCM on cross-sectional and beveled junctions
Duhayon, Natasja; Clarysse, Trudo; Eyben, Pierre; Vandervorst, Wilfried; Hellemans, L. (2001) -
A novel approach of using STM and NC-AFM to study narrow trenches in an oxide matrix
Mannarino, Manuel; Chintala, Ravi Chandra; Eyben, Pierre; Vandervorst, Wilfried (2014) -
A reliable metric for mobility extraction of short channel MOSFETs
Severi, Simone; Pantisano, Luigi; Augendre, Emmanuel; San Andres Serrano, Enrique; Eyben, Pierre; De Meyer, Kristin (2007) -
Accurate carrier profiling of n-type GaAs junctions
Clarysse, Trudo; Brammertz, Guy; Vanhaeren, Danielle; Eyben, Pierre; Goossens, Jozefien; Clemente, Francesca; Meuris, Marc; Vandervorst, Wilfried; Srnanek, Rudolf; Kinder, Rudolf; Sciana, B.; Radziewicz, D.; Li, Zhiqiang (2008) -
Accurate prediction of device performance : Reconstructing 2D-active dopant profiles from 2D-carrier profiles in the presence of extensive mobile carrier diffusion
Nazir, Aftab; Eyben, Pierre; Clarysse, Trudo; Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Vandervorst, Wilfried (2014) -
Accurate prediction of device performance based on 2-D carrier profiles in the presence of extensive mobile carrier diffusion
Nazir, Aftab; Spessot, Alessio; Eyben, Pierre; Clarysse, Trudo; Ritzenthaler, Romain; Schram, Tom; Vandervorst, Wilfried (2014) -
Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations
Eyben, Pierre; Matagne, Philippe; Chiarella, Thomas; De Keersgieter, An; Kubicek, Stefan; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Mocuta, Dan (2016) -
Active dopant characterization methodology for Germanium
Clarysse, Trudo; Eyben, Pierre; Janssens, Tom; Hoflijk, Ilse; Vanhaeren, Danielle; Satta, Alessandra; Meuris, Marc; Vandervorst, Wilfried (2005) -
Active dopant profiling of advanced semiconductor devices using scanning spreading resistance microscopy
Mody, Jay; Eyben, Pierre; Polspoel, Wouter; Schulze, Andreas; Nazir, Aftab; Vandervorst, Wilfried (2008) -
Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Noda, T.; Eyben, Pierre; Vandervorst, Wilfried; Vrancken, Christa; Rosseel, Erik; Ortolland, Claude; Clarysse, Trudo; Goossens, Jozefien; De Keersgieter, An; Felch, S.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2008) -
Advanced carrier depth profiling on Si and Ge with M4PP
Clarysse, Trudo; Eyben, Pierre; Parmentier, Brigitte; Van Daele, Benny; Satta, Alessandra; Vandervorst, Wilfried; Lin, Rong; Petersen, Dirch; Folmer Nielsen, Peter (2007) -
Advanced carrier depth profiling on Si and Ge with micro four-point probe
Clarysse, Trudo; Eyben, Pierre; Parmentier, Brigitte; Van Daele, Benny; Satta, Alessandra; Vandervorst, Wilfried; Lin, Rong; Petersen, Dirch H.; Folmer Nielsen, Peter (2008)