Browsing by author "Buca, Dan"
Now showing items 1-13 of 13
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Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Vohra, Anurag; Loo, Roger; Kohen, David; Margetis, Joe; Tolle, John; Stange, Daniela; Buca, Dan; Vandervorst, Wilfried (2016-11) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Epitaxial GeSn: impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018-05) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors
Schulte-Braucks, Christian; Pandey, Rahul; Sajjad, Redwan Noor; Barth, Mike; Ghosh, Ram Krishna; Grisafe, Ben; Sharma, Pankaj; von den Driesch, Nils; Vohra, Anurag; Rayner, Gilbert Bruce; Loo, Roger; Mantl, Siegfried; Buca, Dan; Yeh, C-C.; Wu, Cheng-Hsien; Tsai, Wilman; Antoniadis, Dimitri; Datta, Suman (2017-09) -
Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Hollaender, Bernd; Buca, Dan; Trinkaus, H.; Mantl, Siegfried; Loo, Roger; Reiche, Manfred (2008) -
Ge epitaxial growth in view of optical device applications
Loo, Roger; Srinivasan, Ashwyn; Shimura, Yosuke; Porret, Clément; Van Thourhout, Dries; Van Deun, Rik; Stoica, Toma; Buca, Dan; Van Campenhout, Joris (2016) -
Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
Hollaender, Bernd; Minamisawa, R.; Buca, Dan; Trinkaus, H; Mantl, Siegfried; Loo, Roger; Hartmann, Jean-Michel (2010) -
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic
Pandey, R; Schulte-Braucks, Christian; Sajjad, R.N.; Barth, M.; Ghosh, R; Grisafe, B.; Sharma, P.; von den Driesch, Niels; Vohra, Anurag; Rayner, R.; Loo, Roger; Mantl, Siegfried; Buca, Dan; Yeh, C.C.; Wu, C-H.; Tsai, Wilman; Antoniadis, A.; Datta, Suman (2016-12) -
Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates
Huging, Norbert; Luysberg, Martina; Urban, Knut; Buca, Dan; Hollander, Bernd; Mantl, Siegfried; Morschbacher, Marcio; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2005) -
Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
Hueging, Norbert; Luysberg, Martina; Urban, Knut; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Morschbacher, Marcio; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2005) -
The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
Luysberg, Martina; Hueging, Norbert; Lenk, Steffi; Buca, Dan; Hollaender, Bernd; Mantl, Siegfried; Marcio, J; Fichtner, Paulo; Loo, Roger; Caymax, Matty (2004) -
The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices
Mantl, S.; Buca, Dan; Hollander, Bernd; Trinkaus, Helmut; Hueging, Norbert; Luysberg, Martina; Lenk, Steffi; Loo, Roger; Caymax, Matty; Shaefer, Herbert; Reiche, Manfred; Radu, Ionut (2005)