Browsing by author "Zhang, E.X."
Now showing items 1-19 of 19
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Charge collection mechanisms of Ge-channel bulk pMOSFETs
Samsel, Isaak; Zhang, E.X.; Sternberg, A.L.; Ni, K.; Reed, Robert; Fleedwood, Daniel; Alles, M.L.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine (2015) -
Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Linten, Dimitri; Fantini, Andrea (2014) -
Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Linten, Dimitri; Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Fantini, Andrea (2014) -
Efficient reliability testing of emerging memory technologies using multiple radiation sources
Bennet, W.G.; Hooten, N.C.; Weeded-Wright, S.; Schrimpf, R.D.; Reed, R.A.; Alles, M.C.; Zhang, E.X.; Mc Curdy, M.W.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Geometry dependence of total dose effects in bulk FINFETs
Chatterjee, I; Zhang, E.X.; Buva, B. L.; Reed, Robert; Alles, M. L.; Nahatme, N. N.; BAll, D. R.; Schrimpf, R.; Fleedwood, D. M.; Mitard, Jerome; Linten, Dimitri; Simoen, Eddy; Claeys, Cor (2014) -
Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
Zhang, E.X.; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, E.D.; Kai, N.; Ball, D.R.; McCurdy, M.W.; Fleetwood, D.M.; Reed, R.A.; Alles, M.C.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome (2014) -
Heavy ion and laser-induced transients in SiGe channel pMOSFETs
Zhang, E.X.; Samsel, I.K.; Bennett, W.G.; Hooten, N.C.; McCurdy, M.; Fleetwood, D.M.; Reed, R.A.; Alles, M.L.; Schrimpf, R.D.; Weller, R.A.; Linten, Dimitri; Mitard, Jerome (2013) -
Interface and border traps in Ge pMOSFETs
Fleetwood, Daniel; Simoen, Eddy; Francis, Sarah; Zhang, C.X.; Arora, R.; Zhang, E.X.; Schrimpf, Ronald; Galloway, Ken; Mitard, Jerome; Claeys, Cor (2012) -
Laser- and heavy ion-induced charge collection in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Pate, N.D.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor; Griffoni, Alessio; Linten, Dimitri; Vizkelethy, G. (2011) -
Laser-induced current transients in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Hooten, N.; Schrimpf, R.D.; Reed, R.; Galloway, K.F.; McMarrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor (2011) -
Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics
Duan, G.X; Zhang, C. X.; Zhang, E.X.; Fleetwood, D.M.; Schrimpf, R.D; Reed, R. A.; Linten, Dimitri; Mitard, Jerome (2013) -
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
El-Mamouni, F.; Zhang, E.X.; Schrimpf, R.D.; Reed, R.A.; Galloway, K.F.; McMorrow, D.; Simoen, Eddy; Claeys, Cor; Cristoloveanu, S.; Xiong, W. (2011) -
Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A. L.; Kuzub, J.A.; Alles, M.L.; Reed, R.; Fleetwood, D.; Schrimpf, R.; Waldron, Niamh; Kunert, Bernardette; Linten, Dimitri (2019) -
TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories
Weeden-Wright, S.L.; Bennett, W.G.; Hooten, N.C.; Zhang, E.X.; McCurdy, M.W.; Schrimpf, R.D.; Reed, R.A.; Weller,; Fleetwood,; Alles, M.C.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015) -
Total-dose-irradiation and annealing responses of Ge-pMOSFETs
Zhang, C.X.; Zhang, E.X.; Fleetwood, Dan; Schrimpf, Ron; Galloway, Ken; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2010) -
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
Gorchichko, M.; Cao, Y.; Zhang, E.X.; Yan, D.; Gong, H.; Zhao, S.E.; Wang, P.; Jiang, R.; Liang, C.; Fleedwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Linten, Dimitri (2020) -
Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Mahatme, Nihaar; Zhang, E.X.; Linten, Dimitri; Griffoni, A.; Aoulaiche, Marc; Simoen, Eddy; Jurczak, Gosia; Bhuva, B.L.; Reed, R.A.; Schrimpf, R.D.; Fleetwood, D.M.; Groeseneken, Guido (2012) -
Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors
Gorchichko, Maria; Zhang, E.X.; Wang, P.; Schrimpf, R.; Reed, R.; Fleetwood, D.M.; Bonaldo, S.; Linten, Dimitri; Mitard, Jerome (2020)