Browsing by author "Put, Sofie"
Now showing items 1-20 of 30
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Charge transport in the discotic liquid crystal H2Pc(14,10)4
Deibel, Carsten; Put, Sofie; Schols, Sarah; Heremans, Paul; De Cupere, Vinciane; Geerts, Yves (2004) -
Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT technology
Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, Nick; Leroux, P. (2008) -
Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13um SiGe:C NPN HBT technology
Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2009) -
Effect of rotation, gate-dielectric and SEG on the noise
Put, Sofie; Mehta, Harsh; Collaert, Nadine; Van Uffelen, M.; Leroux, P.; Simoen, Eddy; Claeys, Cor (2009) -
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Put, Sofie; Mehta, H.; Collaert, Nadine; Van Uffelen, M.; Leroux, P.; Claeys, Cor; Lukyanchikova, N.; Simoen, Eddy (2010) -
Electrical performance and reliability aspects of strain engineered deep submicron CMOS technologies
Claeys, Cor; Eneman, Geert; Bargallo Gonzalez, Mireia; Put, Sofie; Simoen, Eddy (2007) -
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Kilchytska, V.; Alvarado, J.; Collaert, Nadine; Rooyackers, Rita; Put, Sofie; Simoen, Eddy; Claeys, Cor; Flandre, D. (2011) -
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Kilchytska, Valeria; Alvarado, J.; Collaert, Nadine; Rooyackers, Rita; Put, Sofie; Claeys, Cor; Flandre, Denis (2010) -
Geometry and strain dependence of the proton radiation behavior of MuGFET devices
Put, Sofie; Simoen, Eddy; Collaert, Nadine; Claeys, Cor; Van Uffelen, M.; Leroux, P. (2007) -
High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs
Kilchytska, V.; Alvarado, J.; Put, Sofie; Collaert, Nadine; Simoen, Eddy; Claeys, Cor; Militaru, O.; Berger, G.; Flandre, D. (2012) -
High-energy neutrons effect on strained and non-strained SOI MuGFETs
Kilchytska, Valeria; Alvarado, J.; Put, Sofie; Collaert, Nadine; Simoen, Eddy; Claeys, Cor; Militaru, O.; Berger, G.; Flandre, Denis (2010) -
High-temperature characterization of advanced strained nMUGFETs
Talmat, Rachida; Put, Sofie; Collaert, Nadine; Mercha, Abdelkarim; Claeys, Cor; Guo, W.; Cretu, B.; Benfdila, A.; Routoure, J.-M.; Carin, R.; Simoen, Eddy (2010) -
Impact of radiation on the operation and reliability of deep submicron CMOS technologies
Claeys, Cor; Put, Sofie; Griffoni, Alessio; Cester, A.; Gerardin, S.; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy (2010) -
Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
Put, Sofie; Simoen, Eddy; Augendre, Emmanuel; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2007-01) -
Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs
Guo, Wei; Cretu, B.; Routoure, J.-M.; Carin, R.; Simoen, Eddy; Mercha, Abdelkarim; Collaert, Nadine; Put, Sofie; Claeys, Cor (2008) -
Impact strain engineering on gate stack quality and reliability
Claeys, Cor; Simoen, Eddy; Put, Sofie; Giusi, G.; Crupi, F. (2008) -
In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
Put, Sofie; Simoen, Eddy; Van Huylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, M.; Leroux, P.; Berghmans, F. (2007) -
Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
Put, Sofie; Simoen, Eddy; Collaert, Nadine; De Keersgieter, An; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul (2010) -
Influence of fin width on the total dose behavior of p-channe bulk MuGFETs
Put, Sofie; Simoen, Eddy; Jurczak, Gosia; Van Uffelen, Marco; Leroux, Paul; Claeys, Cor (2010) -
Low-frequency noise analysis of g-irradiated p-channel bulk MuGFETs
Simoen, Eddy; Put, Sofie; Leroux, P.; Van Uffelen, M.; Jurczak, Gosia; Claeys, Cor (2010)