Browsing by author "Decoutere, Stefaan"
Now showing items 121-140 of 433
-
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations
Sodan, Vice; Oprins, Herman; Stoffels, Steve; Baelmans, Martine; Decoutere, Stefaan; De Wolf, Ingrid (2017-05) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of AlN buffers for GaN on Si technology
Mare, Juraj; Mikolasek, Miroslav; Drobny, Jakub; Zhao, Ming; Stoffels, Steve; Kosa, Arpad; Benko, Peter; Chvála, Aleš; Bakeroot, Benoit; Decoutere, Stefaan; Stuchlikova, Lubica (2019) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical evaluation of the EPI/substrate interface quality after different in-situ and ex-situ low-temperature pre-epi cleaning methods
Caymax, Matty; Decoutere, Stefaan; Röhr, Erika; Vandervorst, Wilfried; Heyns, Marc; Sprey, Hessel; Storm, Arjen; Maes, J.W. (1998) -
Electrical evaluation of the EPI/substrate interface quality after different in-situ and ex-situ low-temperature pre-epi cleaning methods
Caymax, Matty; Decoutere, Stefaan; Röhr, Erika; Vandervorst, Wilfried; Heyns, Marc; Sprey, Hessel; Storm, Arjen; Maes, J. (1999) -
Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation
Chvála, Ale; Marek, Juraj; Príbytnŭ, Patrik; atka, Alexander; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2017-09) -
Empirical 1/f noise model for polysilicon emitter bipolar junction transistors
Simoen, Eddy; Decoutere, Stefaan; Deferm, Ludo; Claeys, Cor (1996) -
Engineering of the polysilicon emitter interfacial layer using low temperature thermal re-oxidation in an LPCVD cluster tool
Decoutere, Stefaan; Cuthbertson, Alan; Wilhelm, Rudi; Vandervorst, Wilfried; Deferm, Ludo (1995) -
Enhancement of GaN-based device robustness by means of in-situ SiN cap layer
Medjdoub, Farid; Marcon, Denis; Cheng, Kai; Van Hove, Marleen; Leys, Maarten; Decoutere, Stefaan (2010) -
Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates
Liang, Hu; Posthuma, Niels; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan (2019) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
Guo, Weiming; Geens, Karen; Zhao, Ming; Behmenburg, Hannes; Fahle, Dirk; Odnoblyudov, Vlad; Basceri, Cem; Aktas, Ozgur; Decoutere, Stefaan (2018) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Etch development for E-mode GaN power HEMT fabrication
Mannaert, Geert; Posthuma, Niels; De Jaeger, Brice; Van Hove, Marleen; Xu, Kaidong; Decoutere, Stefaan; Paraschiv, Vasile (2014) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018)