Browsing by author "Van Houdt, Jan"
Now showing items 101-120 of 358
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Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells
Tang, Baojun; Zhang, Weidong; Degraeve, Robin; Breuil, Laurent; Blomme, Pieter; Zhang, Jianfu; Ji, Zhigang; Zahid, Mohammed; Toledano Luque, Maria; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Van Houdt, Jan (2012) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Experimental determination of the driving force for switching in TiN/a-Si/TiOx/TiN RRAM devices
Subhechha, Subhali; Degraeve, Robin; Roussel, Philippe; Goux, Ludovic; De Meyer, Kristin; Van Houdt, Jan; Kar, Gouri Sankar (2019) -
Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Breuil, Laurent; Cacciato, Antonio; Rothschild, Aude; Jurczak, Gosia; Van Houdt, Jan; De Meyer, Kristin (2009) -
Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel
Tang, Baojun; Zhang, Weidong; Toledano Luque, Maria; Zhang, Jianfu; Degraeve, Robin; Ji, Zhigang; Arreghini, Antonio; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Experimental study of programming saturation in low-coupling planar high-k/metal gate Nand flash memory cells using a dedicated test structure
Blomme, Pieter; Tan, Chi Lim; Souriau, Laurent; Versluijs, Janko; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Explanation of anomalous erase behaviour and the associated device instability in TANOS Flash using a new trap characterization technique
Degraeve, Robin; Zahid, Mohammed; Van den Bosch, Geert; Blomme, Pieter; Breuil, Laurent; Kaczer, Ben; Mercuri, Marco; Rothschild, Aude; Cacciato, Antonio; Jurczak, Gosia; Groeseneken, Guido; Van Houdt, Jan (2009-10) -
Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices
Wellekens, Dirk; Van Elshocht, Sven; Adelmann, Christoph; Meersschaut, Johan; Swerts, Johan; Kittl, Jorge; Cacciato, Antonio; Debusschere, Ingrid; Jurczak, Gosia; Van Houdt, Jan (2010) -
Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching
Subhechha, Subhali; Govoreanu, Bogdan; Chen, Yangyin; Clima, Sergiu; De Meyer, Kristin; Van Houdt, Jan; Jurczak, Gosia (2016) -
Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model
Schuler, Franz; Tempel, Georg; Melzner, H.; Jacob, M.; Hendrickx, Paul; Wellekens, Dirk; Van Houdt, Jan (2002) -
Failure rate predictions for 0.35μm flash EEPROM memories from accelerated read disturb tests
Vermeulen, Tom; Yao, Thierry; Lowe, Antony; Cacharelis, Philippe; Degraeve, Robin; Van Houdt, Jan (2004-09) -
Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics
Toledano Luque, Maria; Degraeve, Robin; Zahid, Mohammed; Kaczer, Ben; Blomme, Pieter; Kittl, Jorge; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2011) -
Feasibility analysis of direct tunneling through medium-k dielectrics for embedded RAM applications
Govoreanu, Bogdan; Degraeve, Robin; Kauerauf, Thomas; Magnus, Wim; Wellekens, Dirk; Groeseneken, Guido; Van Houdt, Jan (2005) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Ronchi, Nicolo; Ragnarsson, Lars-Ake; Breuil, Laurent; Banerjee, Kaustuv; McMitchell, Sean; O'Sullivan, Barry; Milenin, Alexey; Kundu, Shreya; Pak, Murat; Van den Bosch, Geert; Van Houdt, Jan (2021) -
Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance
Popovici, Mihaela Ioana; Walke, Amey; Banerjee, Kaustuv; Ronchi, Nicolo; Meersschaut, Johan; Celano, Umberto; McMitchell, Sean; Spampinato, Valentina; Franquet, Alexis; Favia, Paola; Swerts, Johan; Van den Bosch, Geert; Van Houdt, Jan (2021) -
Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
Clima, Sergiu; O'Sullivan, Barry; Ronchi, Nicolo; Garcia Bardon, Marie; Banerjee, Kaustuv; Van den Bosch, Geert; Pourtois, Geoffrey; Van Houdt, Jan (2020) -
Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges
Celano, Umberto; Gomez, Andres; Piedimonte, Paola; Neumayer, Sabine; Collins, Liam; Popovici, Mihaela Ioana; Florent, Karine; McMitchell, Sean; Favia, Paola; Drijbooms, Chris; Bender, Hugo; Paredis, Kristof; Di Piazza, Luca; Jesse, Stephen; Van Houdt, Jan; van der Heide, Paul (2020) -
Field and cycling dependence of anomalous charge loss in flash memory cells
Wellekens, Dirk; Hendrickx, Paul; Schuler, Franz; Van Houdt, Jan (2001)