Browsing by author "Roussel, Philippe"
Now showing items 1-20 of 310
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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
Russ, Christian; Verhaege, Koen; Bock, Karlheinz; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress
Russ, Christian; Verhaege, Koen; Bock, Karlheinz; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1998) -
A compact NBTI model for accurate analog integrated circuit reliability simulation
Maricau, Elie; Zhang, Leqi; Franco, Jacopo; Roussel, Philippe; Groeseneken, Guido; Gielen, Georges (2011) -
A comprehensive LER-aware TDDB lifetime model for advanced Cu interconnects
Stucchi, Michele; Roussel, Philippe; Tokei, Zsolt; Demuynck, Steven; Groeseneken, Guido (2011) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling
Roussel, Philippe; Degraeve, Robin; Sahhaf, Sahar; Groeseneken, Guido (2007) -
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
Degraeve, Robin; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Degraeve, Robin; Ogier, Jean-Luc; Bellens, Rudi; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1998) -
A new physically-based model for temperature acceleration of time-to-breakdown
Pangon, Nadège; Degraeve, Robin; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; Crupi, Felice (1998) -
A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
Degraeve, Robin; De Blauwe, Jan; Ogier, Jean-Luc; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices
De Blauwe, Jan; Van Houdt, Jan; Wellekens, Dirk; Degraeve, Robin; Roussel, Philippe; Haspeslagh, Luc; Deferm, Ludo; Groeseneken, Guido; Maes, Herman (1996) -
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
Degraeve, Robin; Roussel, Philippe; Ogier, Jean-Luc; Groeseneken, Guido; Maes, Herman (1996) -
A new TDDB reliability prediction methodology accounting for multiple SBD and wear out
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kaczer, Ben; Kauerauf, Thomas; Groeseneken, Guido (2009) -
A physics-aware compact modeling framework for transistor aging in the entire bias space
Wu, Zhicheng; Franco, Jacopo; Roussel, Philippe; Tyaginov, Stanislav; Truijen, Brecht; Vandemaele, Michiel; Hellings, Geert; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Kaczer, Ben (2019) -
A pragmatic network-aware paradigm for system-level electromigration predictions at scale
Zahedmanesh, Houman; Roussel, Philippe; Ciofi, Ivan; Croes, Kristof (2023) -
A statistical approach to microdose induced degradation in FinFET devices
Griffoni, Alessio; Gerardin, S.; Roussel, Philippe; Degraeve, Robin; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2009) -
Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?
Kauerauf, Thomas; Degraeve, Robin; Zahid, Mohammed; Cho, Moon Ju; Kaczer, Ben; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan (2005) -
Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
Wu, Zhicheng; Franco, Jacopo; Claes, Dieter; Rzepa, Gerhard; Roussel, Philippe; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019)