Browsing by author "Luysberg, M."
Now showing items 1-13 of 13
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Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM
Hueging, N.; Luysberg, M.; Urban, K.; Buca, D.; Holländer, B.; Mantl, S.; Morschbacher, M.; Fichner, P.F.P.; Loo, Roger; Caymax, Matty (2004) -
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
Driussi, F.; Esseni, D.; Selmi, L.; Schmidt, M.; Lemme, M.; Kurz, H.; Buca, D.; Mantl, S.; Luysberg, M.; Loo, Roger; Nguyen, Duy; Reiche, M. (2007) -
He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles
Luysberg, M.; Hueging, N.; Urban, K.; Buca, D.; Holländer, B.; Mantl, S.; Morschbacher, M.; Fichner, P.F.P.; Loo, Roger; Caymax, Matty (2004) -
Large current enhancement in n-MOSFETs with strained Si on insulator
Mantl, S.; Buca, D.; Zhao, Q.T.; Hollaender, B.; Feste, S.; Luysberg, M.; Reiche, M.; Gösele, U.; Buchholtz, W.; Wei, A.; Horstmann, M.; Loo, Roger; Nguyen, Duy (2007) -
Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructures
Morschbacher, M.J.; da Silva, D.L.; Fichtner, P.F.P.; Oliviero, E.; Behar, M.; Zawislak, F.C.; Hollander, B.; Luysberg, M.; Mantl, S.; Loo, Roger; Caymax, Matty (2004) -
Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si
Nichau, Alexander; Schafer, A.; Knoll, L.; Wirths, S.; Schram, Tom; Ragnarsson, Lars-Ake; Schubert, J.; Bernardy, P.; Luysberg, M.; Besmehn, A.; Breuer, U.; Bucca, D.; Mantl, S (2013) -
Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
Mantl, S.; Holländer, B.; Hüging, N.; Luysberg, M.; Lenk, St.; Hogg, S.M.; Herzog, H.-J.; Hackbarth, T.; Loo, Roger; Bauer, M. (2003) -
Strained Si on relaxed SiGe made by ion implantation and strain transfer
Mantl, S.; Buca, D.; Holländer, B.; Mörschbächer, M.; Trinkhaus, H.; Luysberg, M.; Hueging, N.; Houben, L.; Carius, R.; Loo, Roger; Caymax, Matty; Schäfer, H. (2004-10) -
Strained Si-on-insulator for advanced CMOS devices
Mantl, S.; Buca, D.; Zhao, Q.T.; Hollander, B.; Feste, S.; Luysberg, M.; Reiche, M.; Gosele, U.; Buchholtz, W.; Wei, A.; Horstmann, M.; Loo, Roger; Nguyen, Duy (2007) -
The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Buca, D.; Mörschbächer, M.J.; Holländer, B.; Luysberg, M.; Loo, Roger; Caymax, Matty; Mantl, S. (2004) -
Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
Mantl, S.; Holländer, B.; Hüging, N.; Luysberg, M.; Lenk, S.; Hogg, S.M.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Bauer, R. (2003) -
Untersuchung der Anreicherung von Germanium in heliumimplantierten SiGe/Si-Heterostrukturen durch Oxidation
Hueging, N.; Luysberg, M.; Buca, D.; Hollander, B.; Mantl, S.; Loo, Roger; Caymax, Matty; Urban, K. (2005) -
Untersuchung der Heliumimplantation als Schlüsselprozess in der Relaxtion von pseudomorphischen SiGe/Si Heterostrukturen
Luysberg, M.; Buca, D.; Mantl, S.; Morschbacher, M.; Fichner, P.; Loo, Roger; Caymax, Matty; Urban, K.; Hueging, N. (2004)