Browsing by author "Brouri, Mohand"
Now showing items 1-15 of 15
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30-nm half-pitch metal patterning using MotifTM critical dimension shrink technique and double patterning
Versluijs, Janko; de Marneffe, Jean-Francois; Goossens, Danny; Vandeweyer, Tom; Wiaux, Vincent; Struyf, Herbert; Maenhoudt, Mireille; Brouri, Mohand; Vertommen, Johan; Kim, Ji Soo; Zhu, Helen; Sadjadi, Reza (2009) -
30nm half-pitch metal patterning using MotifTM CD shrink technique and double patterning
Versluijs, Janko; de Marneffe, Jean-Francois; Goossens, Danny; Op de Beeck, Maaike; Vandeweyer, Tom; Wiaux, Vincent; Struyf, Herbert; Maenhoudt, Mireille; Brouri, Mohand; Vertommen, Johan; Kim, Ji Soo; Zhu, Helen; Sadjadi, Reza (2008) -
A DC-pulsed capacitively-coupled planar Langmuir probe for plasma process diagnostics and monitoring
Samara, Vladimir; Booth, Jean-Paul; de Marneffe, Jean-Francois; Milenin, Alexey; Brouri, Mohand; Boullart, Werner (2012) -
A way to integrate multiple block layers for middle of line contact patterning
Kunnen, Eddy; Demuynck, Steven; Brouri, Mohand; Boemmels, Juergen; Versluijs, Janko; Ryckaert, Julien (2015) -
Advanced metallization scheme for 3×50μm via middle TSV and beyond
Van Huylenbroeck, Stefaan; Li, Yunlong; Heylen, Nancy; Croes, Kristof; Beyer, Gerald; Beyne, Eric; Brouri, Mohand; Gopinath, Sanjay; Nalla, Praveen; Thorum, Matthew; Meshram, Prashant; Anjos, Daniela M.; Yu, Jengyi (2015) -
C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application
Milenin, Alexey; Lisoni, Judit; Jossart, Nico; Jurczak, Gosia; Struyf, Herbert; Shamiryan, Denis; Brouri, Mohand; Boullart, Werner (2010) -
Continuity and reliability assessment of a scalable 3×50μm and 2×40μm Via-middle TSV module
Van Huylenbroeck, Stefaan; Li, Yunlong; Stucchi, Michele; Bogaerts, Lieve; De Vos, Joeri; Beyer, Gerald; Beyne, Eric; Brouri, Mohand; Nalla, Praveen; Gopinath, Sanjay; Thorum, Matthew; Richardson, Joe; Yu, Jengyi (2016) -
Dependence of etching rate on aspect ratio for high aspect TSV etching
Taichi, Nishio; Aoi, Nobuo; Sasago, Masaru; Kubota, Masafumi; Kostermans, Maarten; Brouri, Mohand; Dupont, Tania (2010) -
Dielectric liner reliability in via-middle through silicon vias with 3 micron diameter
Li, Yunlong; Van Huylenbroeck, Stefaan; Roussel, Philippe; Brouri, Mohand; Gopinath, Sanjaj; M. Anjos, Daniela; Thorum, Matthew; Yu, Jengyi; Beyer, Gerald; Beyne, Eric; Croes, Kristof (2016) -
Effect of precoat on the sidewall profile of through silicon via's
Babaei Gavan, Khashayar; Lazzarino, Frederic; Brouri, Mohand; Tutunjyan, Nina; de Marneffe, Jean-Francois; Kunnen, Eddy; Xu, Kaidong (2013) -
Exploring high aspEct ratio 2μm TSV (25:1)
Kostermans, Maarten; Brouri, Mohand; Baier, Ulrich; Vertommen, Johan; Pageau, Arnaud; Boullart, Werner (2011-11) -
N7 middle of line etch challenges and solutions
Kunnen, Eddy; Brouri, Mohand; Demuynck, Steven; Versluijs, Janko; Boemmels, Juergen; Ryckaert, Julien (2015) -
Overlay Metrology Performance of Dry Photoresist Towards High NA EUV Lithography
Canga, Eren; Blanco, Victor; Charley, Anne-Laure; Tabery, Cyrus; Zacca, Gabriel; Shamma, Nader; Kam, Benjamin; Brouri, Mohand (2024) -
Reliability study of liner/barrier/seed options for via-middle TSV's with 3m diameter and below
Li, Yunlong; Van Huylenbroeck, Stefaan; Roussel, Philippe; Brouri, Mohand; Gopinath, Sanjay; Anjos, Daniela M.; Thorum, Matthew; Yu, Jengyi; Beyer, Gerald; Beyne, Eric; Croes, Kristof (2015) -
Resistance and capacitance measurements of the films deposited on a planar Langmuir probe
Samara, Vladimir; Brouri, Mohand; de Marneffe, Jean-Francois; Milenin, Alexey; Boullart, Werner (2011-11)