Browsing by author "Kumar, Arul"

3D dopant profiling in silicon nanowires

Fleischmann, Claudia; Melkonyan, Davit; Arnoldi, Laurent; Bogdanowicz, Janusz; Kumar, Arul; Veloso, Anabela; Vandervorst, Wilfried (2016)

3D site specific sample preparation and analysis of 3D devices (Finfets) by atom probe tomography

Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography

Vandervorst, Wilfried; Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu (2013)

3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions

Vandervorst, Wilfried; Schulze, Andreas; Eyben, Pierre; Zschaetzsch, Gerd; Koelling, Sebastian; Kumar, Arul; Mody, Jay; Gilbert, Matthieu (2011)

Advances in metrology for complex epitaxial systems embedded in small volums

Vandervorst, Wilfried; Kumar, Arul; Meersschaut, Johan; Franquet, Alexis; Douhard, Bastien; Delmotte, Joris; Conard, Thierry; Nuytten, Thomas; Hantschel, Thomas; Loo, Roger (2015-05)

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015)

Application of atom probe tomography to epitaxial layers

Kumar, Arul; Gilbert, Matthieu; Kambham, Ajay Kumar; Gencarelli, Federica; Loo, Roger; Vandervorst, Wilfried (2013)

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

Melkonyan, Davit; Fleischmann, Claudia; Veloso, Anabela; Arnoldi, Laurent; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2016)

Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts

Melkonyan, Davit; Fleischmann, Claudia; Arnoldi, Laurent; Demeulemeester, Jelle; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2017)

Atom probe tomography for 3D-dopant analysis in FinFET devices

Kambham, Ajay Kumar; Zschaetzsch, Gerd; Sasaki, Yuichiro; Togo, Mitsuhiro; Horiguchi, Naoto; Mody, J.; Florakis, Antonios; Gajula, D.R.; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

Atom probe tomography for advanced semiconductor metrology

Gilbert, Matthieu; Kambham, Ajay Kumar; Kumar, Arul; Vandervorst, Wilfried (2012)

Atom-probe for arsenic implant doped FinFET characterization

Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

Atomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography

Kumar, Arul; Kambham, Ajay Kumar; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

Atomic insight of Ge(1-x)Sn(x) using atom probe tomography

Kumar, Arul; Gencarelli, Federica; Vincent, Benjamin; Kambham, Ajay Kumar; Gilbert, Matthieu; Vandervorst, Wilfried (2012)

Challenges for APT in advanced semiconductor technology research

Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Arnoldi, Laurent; Kumar, Arul; Vurpillot, Francois; Vandervorst, Wilfried (2016)

Crystalline properties and strain relaxation mechanism of CVD grown GeSn

Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012)

Crystalline properties and strain relaxation mechanism of CVD grown GeSn

Gencarelli, Federica; Vincent, Benjamin; Kumar, Arul; Demeulemeester, Jelle; Vantomme, Andre; Franquet, Alexis; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012)

Crystalline properties and strain relaxation mechanism of CVD grown GeSn

Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2013)

CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices

Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012)

Elemental redistribution of Pt and Pd in nickel silicides: a comparative study

Schrauwen, A.; Demeulemeester, Jelle; Kumar, Arul; De Schutter, B.; Vandervorst, Wilfried; Detavernier, C.M.; Comrie, C.M.; Temst, Kristiaan; Vantomme, Andre (2012)