Browsing by author "Zhang, Jian Fu"

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016)

A Pragmatic Model to Predict Future Device Aging

Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu (2023)

A single pulse charge pumping technique for fast measurements of interface states

Lin, L.; Ji, Zhigang; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; De Gendt, Stefan; Groeseneken, Guido (2011)

An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques

Ji, Zhigang; Zhang, Jian Fu; Chang, Mo Huai; Kaczer, Ben; Groeseneken, Guido (2009-05)

An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015)

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021)

Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

Zheng, X.F.; Robinson, Colin; Zhang, W.D.; Zhang, Jian Fu; Govoreanu, Bogdan; Van Houdt, Jan (2011-05)

Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

Zhou, Xue; Hu, Zeyu; Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Degraeve, Robin; Zhang, Jian Fu; Fantini, Andrea; Garbin, Daniele; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2022)

Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

Duan, Meng; Zhang, Jian Fu; Ji, Zhigang; Zhang, Wei Dong; Vigar, David; Asen, Asenov; Gerrer, Louis; Chandra, Vikas; Aitken, Rob; Kaczer, Ben (2016)

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

Duan, Meng; Zhang, Jian Fu; Ji, Zhigang; Zhang, Wei Dong; Kaczer, Ben; Asenov, Asen (2017)

NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement

Ji, Zhigang; Lin, L.; Zhang, Jian Fu; Kaczer, Ben; Groeseneken, Guido (2010)

NBTI-generated defects in nanoscaled devices: fast characterization methodology and modeling

Gao, Rui; Ji, Zhigang; Manut, Azrif B.; Zhang, Jian Fu; Franco, Jacopo; Hatta, Sharifah Wan Muhamad; Zhang, Wei Dong; Kaczer, Ben; Linten, Dimitri; Groeseneken, Guido (2017)

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Hu, Zeyu; Zhang, Weidong; Degraeve, Robin; Garbin, Daniele; Chai, Zheng; Saxena, Nishant; Freitas, Pedro; Fantini, Andrea; Ravsher, Taras; Clima, Sergiu; Zhang, Jian Fu; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2023)

Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Ji, Zhigang; Zhang, Jian Fu; Jurczak, Gosia (2017)