Browsing by author "Kim, Ryan Ryoung han"
Now showing items 21-40 of 43
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Exploration of Alternative Mask for 0.33NA EUV Single Patterning at Pitch 28nm
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Philipsen, Vicky; Kim, Ryan Ryoung han (2021-10-12) -
Exploration of alternative mask for 0.33NA extreme ultraviolet single patterning at pitch 28-nm metal design
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Philipsen, Vicky; Kim, Ryan Ryoung han (2022) -
Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Rio, David; Delorme, Max; Philipsen, Vicky; Kim, Ryan Ryoung han (2022-11-25) -
IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend
Kim, Ryan Ryoung han; Sherazi, Yasser; Debacker, Peter; Raghavan, Praveen; Ryckaert, Julien; Mallik, Arindam; Verkest, Diederik; Lee, Jae Uk; Gillijns, Werner; Tan, Ling Ee; Blanco, Victor; Ronse, Kurt; McIntyre, Greg (2018) -
Investigation of Low-n Mask in 0.33NA EUV Single Patterning at Pitch 28nm Metal Design
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Philipsen, Vicky; Kim, Ryan Ryoung han (2022-05-26) -
Large marginal 2D self-aligned via patterning for sub-5nm technology
Choi, Suhyeong; Lee, Jae Uk; Blanco, Victor; Debacker, Peter; Raghavan, Praveen; Kim, Ryan Ryoung han; Shin, Youngsoo (2017) -
Low track height standard cell design in iN7 using scaling boosters
Sherazi, Yasser; Jha, Chaitanya; Rodopoulos, Dimitrios; Debacker, Peter; Chava, Bharani; Mattii, Luca; Garcia Bardon, Marie; Schuddinck, Pieter; Raghavan, Praveen; Gerousis, V.; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda; Kim, Ryan Ryoung han; Ryckaert, Julien (2017) -
Low track height standard-cells enable high-placement density and low-BEOL cost
Debacker, Peter; Mattii, Luca; Sherazi, Yasser; Baert, Rogier; Gerousis, Vassilios; Nauts, Claire; Raghavan, Praveen; Ryckaert, Julien; Kim, Ryan Ryoung han; Verkest, Diederik (2017) -
Machine learning based recursive partitioning for simplifying OPC model building complexity
Oak, Apoorva; Hwang, Soobin; Chen, Ruoxia; Kang, Shinill; Kim, Ryan Ryoung han (2021) -
Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance
Gao, Weimin; Blanco, Victor; Philipsen, Vicky; Kamohara, Itaru; Saad, Yves; Ciofi, Ivan; Melvin, Lawrence; Hendrickx, Eric; Wiaux, Vincent; Kim, Ryan Ryoung han (2017) -
Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations
Vega Gonzalez, Victor; Montero Alvarez, Daniel; Versluijs, Janko; Varela Pedreira, Olalla; Jourdan, Nicolas; Puliyalil, Harinarayanan; Chehab, Bilal; Peissker, Tobias; Haider, Ali; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Le, Quoc Toan; Bazzazian, Nina; Heylen, Nancy; van der Veen, Marleen; El-Mekki, Zaid; Webers, Tomas; Vats, H.; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Gillijns, Werner; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Ciofi, Ivan; De Wachter, Bart; Swerts, Johan; Grieten, Eva; Ercken, Monique; Kim, Ryan Ryoung han; Croes, Kristof; Leray, Philippe; Jaysankar, Manoj; Nagesh, Nishanth; Ramakers, Leon; Murdoch, Gayle; Park, Seongho; Tokei, Zsolt; Dentoni Litta, Eugenio; Horiguchi, Naoto (2021) -
Reticle enhancement techniques toward iN7 metal2
Gillijns, Werner; Tan, Ling Ee; Blanco, Victor; Trivkovic, Darko; Kim, Ryan Ryoung han; Gallagher, Emily; McIntyre, Greg (2017) -
SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
Bekaert, Joost; Di Lorenzo, Paolo; Mao, Ming; Decoster, Stefan; Lariviere, Stephane; Franke, Joern-Holger; Blanco, Victor; Kutrzeba Kotowska, Bogumila; Lazzarino, Frederic; Gallagher, Emily; Hendrickx, Eric; Leray, Philippe; Kim, Ryan Ryoung han; McIntyre, Greg; Colsters, Paul; Wittebrood, Friso; van Dijk, Joep; Maslow, Mark; Timoshkov, Vadim; Kiers, Ton (2017) -
Single exposure EUV patterning for BEOL metal layers on the imec iN7 platform
Blanco, Victor; Bekaert, Joost; Mao, Ming; Kutrzeba Kotowska, Bogumila; Lariviere, Stephane; Ciofi, Ivan; Baert, Rogier; Kim, Ryan Ryoung han; Gallagher, Emily; Hendrickx, Eric; Tan, Ling Ee; Gillijns, Werner; Trivkovic, Darko; Leray, Philippe; Halder, Sandip; Gallagher, Matt; Lazzarino, Frederic; Paolillo, Sara; Wan, Danny; Mallik, Arindam; Sherazi, Yasser; McIntyre, Greg; Dusa, Mircea; Rusu, Paul; Hollink, Thijs; Fliervoet, Timon; Wittebrood, Friso (2017) -
Single Mask Solution to Pattern BLP and SNLP using 0.33NA EUV for Next Generation DRAM Manufacturing
Sah, Kaushik; Cross, Andrew; Das, Sayantan; Fallica, Roberto; Lee, Jeonghoon; Kim, Ryan Ryoung han; Halder, Sandip; Maguire, Ethan; Armeanu, Ana-Maria; Sears, Monica; Lafferty, Neal; Liubich, Vlad; Wei, Chih-, I; Fenger, Germain (2022) -
Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm
Weckx, Pieter; Ryckaert, Julien; Putcha, Vamsi; De Keersgieter, An; Boemmels, Juergen; Schuddinck, Pieter; Jang, Doyoung; Yakimets, Dmitry; Garcia Bardon, Marie; Ragnarsson, Lars-Ake; Raghavan, Praveen; Kim, Ryan Ryoung han; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda (2017) -
Standard-cell design architecture options below 5nm node: the ultimate scaling of FinFET and nanosheet
Sherazi, Yasser; Cupak, Miroslav; Weckx, Pieter; Zografos, Odysseas; Jang, Doyoung; Debacker, Peter; Verkest, Diederik; Mocuta, Anda; Kim, Ryan Ryoung han; Spessot, Alessio; Ryckaert, Julien (2019) -
Supervia Process Integration and Reliability Compared to Stacked Vias Using Barrierless Ruthenium
Vega Gonzalez, Victor; Puliyalil, Harinarayanan; Versluijs, Janko; Lesniewska, Alicja; Varela Pedreira, Olalla; Baert, Rogier; Paolillo, Sara; Decoster, Stefan; Schleicher, Filip; Montero Alvarez, Daniel; Bekaert, Joost; Kesters, Els; Le, Quoc Toan; Lorant, Christophe; Teugels, Lieve; Heylen, Nancy; Jourdan, Nicolas; El-Mekki, Zaid; van der Veen, Marleen; Ciofi, Ivan; Briggs, Basoene; Heijlen, Jeroen; Dupas, Luc; De Wachter, Bart; Vancoille, Eric; Webers, Tomas; Vats, Hemant; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Demonie, Ingrid; Lazzarino, Frederic; Ercken, Monique; Kim, Ryan Ryoung han; Trivkovic, Darko; Croes, Kristof; Leray, Philippe; Jaysankar, Manoj; Wilson, Chris; Murdoch, Gayle; Tokei, Zsolt (2020) -
The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7
Appeltans, Raf; Weckx, Pieter; Raghavan, Praveen; Kim, Ryan Ryoung han; Kar, Gouri Sankar; Furnemont, Arnaud; Van der Perre, Liesbet; Dehaene, Wim (2017) -
The imec iN7 EUV platform: M2-Block and Via patterning developments
Bekaert, Joost; Franke, Joern-Holger; Mao, Ming; Lariviere, Stephane; Decoster, Stefan; Di Lorenzo, Paolo; Kutrzeba Kotowska, Bogumila; Blanco, Victor; Hendrickx, Eric; Gallagher, Emily; Leray, Philippe; Kim, Ryan Ryoung han; McIntyre, Greg; Colsters, Paul; Wittebrood, Friso; van Dijk, Joep; Timoshkov, Vadim; Kiers, Ton; Maslow, Mark (2016)