Browsing by author "Kim, Ryan Ryoung han"
Now showing items 1-20 of 43
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21 nm Pitch dual-damascene BEOL process integration with full barrierless Ru metallization
Vega Gonzalez, Victor; Wilson, Chris; Paolillo, Sara; Decoster, Stefan; Mao, Ming; Versluijs, Janko; Blanco, Victor; Kesters, Els; Le, Quoc Toan; Lorant, Christophe; Varela Pedreira, Olalla; Lesniewska, Alicja; Heylen, Nancy; El-Mekki, Zaid; van der Veen, Marleen; Webers, Tomas; Vats, Hemant; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Jourdan, Nicolas; Ciofi, Ivan; Contino, Antonino; Boccardi, Guillaume; Lariviere, Stephane; De Wachter, Bart; Vancoille, Eric; Lazzarino, Frederic; Ercken, Monique; Kim, Ryan Ryoung han; Trivkovic, Darko; Croes, Kristof; Leray, Philippe; Pardons, Katrien; Barla, Kathy; Tokei, Zsolt (2019) -
2D self-aligned via patterning strategy with EUV single exposure in 3nm technology
Choi, Suhyeong; Lee, Jae Uk; Blanco, Victor; Kim, Ryan Ryoung han; Shin, Youngsoo (2017) -
A yield prediction model and cost of ownership for productivity enhancement beyond imec 5nm technology node
Tsai, Yi-Pei; Chang, Yi-Han; Wang, Jane; Trivkovic, Darko; Ronse, Kurt; Kim, Ryan Ryoung han (2022) -
Analysis of advanced technology nodes and h-NA EUV introduction: a cost perspective
Mirabelli, Gioele; Wang, Jane; Trivkovic, Darko; Weckx, Pieter; Spessot, Alessio; Ronse, Kurt; Kim, Ryan Ryoung han; Hellings, Geert; Ryckaert, Julien (2021) -
CFET standard-cell design down to 3Track height for node 3nm and below
Sherazi, Yasser; Chae, Jung Kyu; Debacker, Peter; Mattii, Luca; Verkest, Diederik; Mocuta, Anda; Kim, Ryan Ryoung han; Spessot, Alessio; Dounde, Amit; Ryckaert, Julien (2019) -
Concurrent design rule, OPC and process optimization in EUV lithography
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Lee, Jae Uk; Kim, Ryan Ryoung han (2020) -
Cost-performance optimisation of fine-pitch W2W bonding: functional system partitioning with heterogeneous FEOL/BEOL configurations
Milojevic, Dragomir; Van der Plas, Geert; Beyne, Eric; Debacker, Peter; Wang, Jane; Kim, Ryan Ryoung han; Velenis, Dimitrios (2020) -
Design and Mask Optimization Toward Low Dose EUV Exposure
Xu, Dongbo; Gillijns, Werner; Kim, Ryan Ryoung han (2022-05-26) -
Design and pitch scaling for affordable node transition and EUV insertion scenario
Kim, Ryan Ryoung han; Ryckaert, Julien; Raghavan, Praveen; Sherazi, Yasser; Debacker, Peter; Trivkovic, Darko; Gillijns, Werner; Tan, Ling Ee; Drissi, Youssef; Blanco, Victor; Bekaert, Joost; Mao, Ming; Lariviere, Stephane; McIntyre, Greg (2017) -
Design, patterning, and process integration overview for 2nm node
Sherazi, Yasser; Chang, Yi-Han; Drissi, Youssef; Chehab, Bilal; Vega Gonzalez, Victor; Kim, Ryan Ryoung Han; Lee, Jae Uk (2022) -
Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison
Gao, Weimin; Wiaux, Vincent; Hoppe, Wolfgang; Philipsen, Vicky; Melvin, Lawrence; Hendrickx, Eric; Lucas, Kevin; Kim, Ryan Ryoung han (2018) -
Economics of semiconductor scaling – a cost analysis for advanced technology node
Mallik, Arindam; Ryckaert, Julien; Kim, Ryan Ryoung han; Debacker, Peter; Decoster, Stefan; Lazzarino, Frederic; Ritzenthaler, Romain; Horiguchi, Naoto; Verkest, Diederik; Mocuta, Anda (2019) -
Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers
Lariviere, Stephane; Wilson, Chris; Kutrzeba Kotowska, Bogumila; Versluijs, Janko; Decoster, Stefan; Mao, Ming; van der Veen, Marleen; Jourdan, Nicolas; El-Mekki, Zaid; Heylen, Nancy; Kesters, Els; Verdonck, Patrick; Beral, Christophe; Van Den Heuvel, Dieter; De Bisschop, Peter; Bekaert, Joost; Blanco, Victor; Ciofi, Ivan; Wan, Danny; Briggs, Basoene; Mallik, Arindam; Hendrickx, Eric; Kim, Ryan Ryoung han; McIntyre, Greg; Ronse, Kurt; Boemmels, Juergen; Tokei, Zsolt; Mocuta, Dan (2018) -
EUV based multi-patterning schemes for advanced DRAM nodes
Das, Sayantan; Sah, Kaushik; Fallica, Roberto; Chen, Zhijin; Halder, Sandip; Cross, Andrew; De Simone, Danilo; Treska, Fergo; Leray, Philippe; Kim, Ryan Ryoung han; Maguire, Ethan; Wei, Chih-, I; Fenger, Germain; Lafferty, Neal; Lee, Jeonghoon (2022) -
EUV lithography and the materials that propel it forward
Gallagher, Emily; Hendrickx, Eric; Kim, Ryan Ryoung han; Leray, Philippe; Philipsen, Vicky; Pollentier, Ivan; Rincon Delgadillo, Paulina; Ronse, Kurt; Timmermans, Marina; De Simone, Danilo (2020) -
EUV low-n attenuated phase-shift mask on random logic Via single patterning at pitch 36nm
Tan, Ling Ee; Gillijns, Werner; Lee, Jae Uk; Xu, Dongbo; Van de Kerkhove, Jeroen; Philipsen, Vicky; Kim, Ryan Ryoung han (2022-05-26) -
EUV Single Patterning Exploration for Pitch 28 nm
Xu, Dongbo; Gillijns, Werner; Drissi, Youssef; Tan, Ling Ee; Oak, Apoorva; Kim, Ryan Ryoung han (2021-02-22) -
EUV single patterning for logic metal layers: achievement and challenge
Kim, Ryan Ryoung han; Gillijns, Werner; Drissi, Youssef; Trivkovic, Darko; Blanco, Victor; Lariviere, Stephane; De Ruyter, Rudi; Dehan, Morin; McIntyre, Greg; Tan, Ling Ee (2017) -
EUVL Gen 2.0: Key requirements for constraining semiconductor cost in advanced technology node manufacturing
Mallik, Arindam; Debacker, Peter; McIntyre, Greg; Kim, Ryan Ryoung han; Ronse, Kurt (2018) -
EUVL is being inserted in HVM in 2019 : what are the mask related challenges remaining ?
Ronse, Kurt; Jonckheere, Rik; Gallagher, Emily; Philipsen, Vicky; Van Look, Lieve; Hendrickx, Eric; Kim, Ryan Ryoung han (2019)