Browsing by author "Goodwin, Michael"
Now showing items 1-20 of 20
-
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
A disorder-controlled-kinetics model for Negative Bias Temperature Instability and its experimental verification
Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005-04) -
A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node
Collaert, Nadine; Dixit, Abhisek; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Degroote, Bart; Leunissen, Peter; Veloso, Anabela; Jonckheere, Rik; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2004-08) -
Analysis of the parasitic S/D resistance in multiple-gate FETs
Dixit, Abhisek; Kottantharayil, Anil; Collaert, Nadine; Goodwin, Michael; Jurczak, Gosia; De Meyer, Kristin (2005) -
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Kottantharayil, Anil; Verheyen, Peter; Collaert, Nadine; Dixit, Abhisek; Kaczer, Ben; Snow, Jim; Vos, Rita; Locorotondo, Sabrina; Degroote, Bart; Shi, Xiaoping; Rooyackers, Rita; Mannaert, Geert; Brus, Stephan; Yim, Yong Sik; Lauwers, Anne; Goodwin, Michael; Kittl, Jorge; Van Dal, Mark; Richard, Olivier; Veloso, Anabela; Kubicek, Stefan; Beckx, Stephan; Boullart, Werner; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
Verheyen, Peter; Eneman, Geert; Rooyackers, Rita; Loo, Roger; Eeckhout, Lieve; Rondas, Dirk; Leys, Frederik; Snow, Jim; Shamiryan, Denis; Demand, Marc; Hoffmann, Thomas Y.; Goodwin, Michael; Fujimoto, Hiromasa; Ravit, Claire; Lee, Byeong Chan; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005-12) -
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005) -
GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
Hoffmann, Thomas Y.; Doornbos, Gerben; Ferain, Isabelle; Collaert, Nadine; Zimmerman, Paul; Goodwin, Michael; Rooyackers, Rita; Kottantharayil, Anil; Yim, Yong Sik; Dixit, Abhisek; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2005) -
Integration challenges for multi-gate devices
Collaert, Nadine; Brus, Stephan; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Verheyen, Peter; Yim, Yong Sik; Zimmerman, Paul; Beckx, Stephan; Degroote, Bart; Demand, Marc; Kim, Myeong-Cheol; Kunnen, Eddy; Locorotondo, Sabrina; Mannaert, Geert; Neuilly, Francois; Shamiryan, Denis; Baerts, Christina; Ercken, Monique; Laidler, David; Leys, Frederik; Loo, Roger; Lisoni, Judit; Snow, Jim; Vos, Rita; Boullart, Werner; Pollentier, Ivan; De Gendt, Stefan; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2005) -
Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits
Witters, Liesbeth; Collaert, Nadine; Nackaerts, Axel; Demand, Marc; Demuynck, Steven; Delvaux, Christie; Lauwers, Anne; Baerts, Christina; Beckx, Stephan; Boullart, Werner; Brus, Stephan; Degroote, Bart; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Ercken, Monique; Goodwin, Michael; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Leray, Philippe; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Willems, Patrick; Wouters, Johan M. D.; Jurczak, Gosia; Biesemans, Serge (2005) -
Minimization of MuGFET source/drain resistance using wrap-around NiSi contacts
Dixit, Abhisek; Kottantharayil, Anil; Brus, Stephan; Rooyackers, Rita; Goodwin, Michael; Collaert, Nadine; Jurczak, Gosia; De Meyer, Kristin (2005-04) -
Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions
Dixit, Abhisek; Rooyackers, Rita; Leys, Frederik; Kaiser, Monja; Weemaes, R.; Ferain, Isabelle; De Keersgieter, An; Collaert, Nadine; Surdeanu, Radu; Goodwin, Michael; Zimmerman, Paul; Loo, Roger; Caymax, Matty; Jurczak, Gosia; Biesemans, Serge; De Meyer, Kristin (2005) -
NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics
Henson, Kirklen; Collaert, Nadine; Demand, Marc; Goodwin, Michael; Brus, Stephan; Rooyackers, Rita; Van Ammel, Annemie; Degroote, Bart; Ercken, Monique; Baerts, Christina; Kottantharayil, Anil; Dixit, Abhisek; Beckx, Stephan; Schram, Tom; Deweerd, Wim; Boullart, Werner; Schaekers, Marc; De Gendt, Stefan; De Meyer, Kristin; Yim, Yong Sik; Hooker, Jacob; Jurczak, Gosia; Biesemans, Serge (2005) -
On the scalability of source/drain current enhancement in thin film sSOI
Augendre, Emmanuel; Eneman, Geert; De Keersgieter, An; Simons, Veerle; De Wolf, Ingrid; Ramos, Javier; Brus, Stephan; Pawlak, Bartek; Severi, Simone; Leys, Frederik; Sleeckx, Erik; Locorotondo, Sabrina; Ercken, Monique; de Marneffe, Jean-Francois; Fei, Lu; Seacrist, Mike; Kellerman, Bruce; Goodwin, Michael; Jurczak, Gosia; Biesemans, Serge (2005) -
Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins
Dixit, Abhisek; Ferain, Isabelle; De Meyer, Kristin; Kottantharayil, Anil; Collaert, Nadine; Rooyackers, Rita; Leys, Frederik; De Keersgieter, An; Hoffmann, Thomas; Loo, Roger; Caymax, Matty; Jurczak, Gosia; Biesemans, Serge; Goodwin, Michael; Zimmerman, Paul (2005-10) -
Performance improvement of tall triple gate devices with strained SiN layers
Collaert, Nadine; De Keersgieter, An; Kottantharayil, Anil; Rooyackers, Rita; Eneman, Geert; Goodwin, Michael; Eyckens, Brenda; Sleeckx, Erik; de Marneffe, Jean-Francois; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005-11) -
Tall triple-gate device with TiN/HfO2 gate stack
Collaert, Nadine; Demand, Marc; Ferain, Isabelle; Lisoni, Judit; Singanamalla, Raghunath; Zimmerman, Paul; Yim, Yong Sik; Schram, Tom; Mannaert, Geert; Goodwin, Michael; Hooker, Jacob; Neuilly, Francois; Kim, Myeong-Cheol; De Meyer, Kristin; De Gendt, Stefan; Boullart, Werner; Jurczak, Gosia; Biesemans, Serge (2005) -
Temperature dependence of the negative bias temperature instability in the framework of dispersive transport
Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005) -
The influence of recovery and temperature on the NBTI power-law exponent
Kaczer, Ben; Degraeve, Robin; Arkhipov, Vladimir; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2004) -
Towards optimally shaped fins in P-channel tri-gate FETs: Can fin height be reduced further?
Dixit, Abhisek; Kottantharayil, Anil; Mercha, Abdelkarim; Collaert, Nadine; Brus, Stephan; Richard, Olivier; Rooyackers, Rita; Goodwin, Michael; Jurczak, Gosia; De Meyer, Kristin (2005)