Browsing by author "Lorenzini, Martino"

A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage

Breuil, Laurent; Schuler, Franz; Haspeslagh, Luc; Wellekens, Dirk; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan (2003)

A new scalable self-aligned dual-bit split-gate charge trapping memory device

Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Wellekens, Dirk; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan (2005)

Advanced modeling and parameter extraction of the MOSFET ESD breakdown triggering in the 90nm CMOS node technologies

Vassilev, Vesselin; Lorenzini, Martino; Jansen, Philippe; Groeseneken, Guido; Thijs, Steven; Mahadeva Iyer, Natarajan; Steyaert, M.; Maes, Herman (2004)

Analysis and improved compact modelling of the breakdown behaviour of sub-0.25 micron ESD protection ggNMOS devices

Vassilev, Vesselin; Lorenzini, Martino; Groeseneken, Guido; Steyaert, Michel; Maes, Herman (2001)

Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

Degraeve, Robin; Schuler, Franz; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2001)

Analytical percolation model for predicting anomalous charge loss in flash memories

Degraeve, Robin; Schuler, Franz; Kaczer, Ben; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Duuren, Michiel; Dormans, G.J.M.; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2004)

Back-bias enhanced source-side injection in 0.25μm embedded flash memories

Van Houdt, Jan; Verheyen, P.; Frisson, Jo; Wellekens, Dirk; Lorenzini, Martino; Maes, Herman (1999)

Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge pumping technique

Rosmeulen, Maarten; Breuil, Laurent; Lorenzini, Martino; Haspeslagh, Luc; Van Houdt, Jan; De Meyer, Kristin (2003)

Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique

Rosmeulen, Maarten; Breuil, Laurent; Lorenzini, Martino; Haspeslagh, Luc; Van Houdt, Jan; De Meyer, Kristin (2004-09)

Comparative reliability investigation of different nitride based local charge trapping memory devices

Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Lorenzini, Martino; Wellekens, Dirk; De Vos, Joeri; Van Houdt, Jan (2005)

Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide

Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Degraeve, Robin; Lorenzini, Martino; Rosmeulen, Maarten; Groeseneken, Guido; Maes, Herman (2003)

High-k materials for tunnel barrier engineering in future memory technologies

Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2004-10)

Higk-k materials for tunnel barrier engineering in floating-gate flash memories

Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2005)

Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.

Blomme, Pieter; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2004)