Browsing by author "Demeurisse, Caroline"
Now showing items 1-20 of 36
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3D IC process development for enabling chip-on-chip and chip on wafer multi-stacking at assembly
Daily, Robert; Capuz, Giovanni; Wang, Teng; Bex, Pieter; Struyf, Herbert; Sleeckx, Erik; Demeurisse, Caroline; Attard, A.; Eberharter, W.; Klingler, H. (2015) -
A feasibility study of dual damascene porous SiLK resin with spin-on hard masks
Hoofman, Romano; Michelon, Julien; Verheijden, G.J.A.M.; Waeterloos, Joost; Caluwaerts, Rudy; Schmidt, M.O.; Demeurisse, Caroline; Vandeweyer, Tom; Demuynck, Steven; Tokei, Zsolt; Beyer, Gerald (2004) -
Applications of smart monomolecular films in IC microelectronics for organic-inorganic interface engineering
Armini, Silvia; Herregods, Sebastiaan; Lecordier, Laurent; Verheyen, Claudia; Delande, Tinne; Demeurisse, Caroline; Spampinato, Valentina; Tokei, Zsolt; Struyf, Herbert (2017) -
Challenges and solutions on pre-assembly processes for thinned 3D wafers with micro-bumps on the backside
Podpod, Arnita; Demeurisse, Caroline; Rebibis, Kenneth June; Gerets, Carine; Phommahaxay, Alain; Capuz, Giovanni; Duval, Fabrice; Sleeckx, Erik; Struyf, Herbert; Miller, Andy; Beyne, Eric; Beyer, Gerald (2014) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
CoSi2 formation from CoxNi1-x/Ti system
Chamirian, Oxana; Lauwers, Anne; Demeurisse, Caroline; Guérault, H.; Vantomme, Andre; Maex, Karen (2002) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates
Simoen, Eddy; Satta, Alessandra; Meuris, Marc; Janssens, Tom; Clarysse, Trudo; Benedetti, Alessandro; Demeurisse, Caroline; Brijs, Bert; Hoflijk, Ilse; Vandervorst, Wilfried; Claeys, Cor (2005) -
Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates
Kittl, Jorge; Lauwers, Anne; Demeurisse, Caroline; Vrancken, Christa; Kubicek, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Dopants for N and P junctions in germanium
Satta, Alessandra; Simoen, Eddy; Meuris, Marc; Janssens, Tom; Clarysse, Trudo; Demeurisse, Caroline; Hoflijk, Ilse; Vandervorst, Wilfried (2005) -
Effects of alloying on properties of NiSi for CMOS applications
Van Dal, Mark; Akheyar, Amal; Kittl, Jorge; Chamirian, Oxana; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Lauwers, Anne; Maex, Karen (2004) -
Electrical properties of n-MOSFETs using the NiSi:Yb FUSI electrode
Yu, HongYu; Lauwers, Anne; Demeurisse, Caroline; Richard, Olivier; Mertens, Sofie; Opsomer, Karl; Singanamalla, Raghunath; Rosseel, Erik; Absil, Philippe; Biesemans, Serge (2007-02) -
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Kim, Min-Soo; Kaczer, Ben; Opsomer, Karl; Schaekers, Marc; Favia, Paola; Bender, Hugo; Vrancken, Christa; Govoreanu, Bogdan; Demeurisse, Caroline; Wang, Wan-Chih; Afanasiev, Valeri; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Enabling pre-sssembly process of 3D wafers with high topography at the backside
Podpod, Arnita; Demeurisse, Caroline; Inoue, Fumihiro; Duval, Fabrice; Visker, Jakob; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Beyer, Gerald; Beyne, Eric (2015) -
Hybrid 14nm FinFET - Silicon photonics technology for low-power Tb/s/mm2 optical I/O
Rakowski, Michal; Ban, Yoojin; De Heyn, Peter; Pantano, Nicolas; Snyder, Brad; Balakrishnan, Sadhishkumar; Van Huylenbroeck, Stefaan; Bogaerts, Lieve; Demeurisse, Caroline; Inoue, Fumihiro; Rebibis, Kenneth June; Nolmans, Philip; Sun, Xiao; Bex, Pieter; Srinivasan, Ashwyn; De Coster, Jeroen; Lardenois, Sebastien; Miller, Andy; Absil, Philippe; Verheyen, Peter; Velenis, Dimitrios; Pantouvaki, Marianna; Van Campenhout, Joris (2018) -
Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Opsomer, Karl; Polspoel, Wouter; Favia, Paola; Vrancken, Christa; Demeurisse, Caroline; Wang, W.-C.; Afanasiev, Valeri; Vandervorst, Wilfried; Bender, Hugo; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements
Kittl, Jorge; Pawlak, Malgorzata; Torregiani, Cristina; Lauwers, Anne; Demeurisse, Caroline; Vrancken, Christa; Absil, Philippe; Biesemans, Serge; Detavernier, Christophe; Jordan-Sweet, Jean; Lavoie, Christian (2007) -
Linewidth dependence of the reverse bias junction leakage for co-silicided source/drain junctions
Lauwers, Anne; de Potter de ten Broeck, Muriel; Lindsay, Richard; Chamirian, Oxana; Demeurisse, Caroline; Vrancken, Christa; Maex, Karen (2002) -
Low temperature spike anneal for Ni-Silicide formation
Lauwers, Anne; Kittl, Jorge; Van Dal, Mark; Chamirian, Oxana; Lindsay, Richard; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Vrancken, Christa; Maex, Karen (2004-11) -
Materials issues of Ni fully silicided (FUSI) gates for CMOS applications
Kittl, Jorge; Lauwers, Anne; Kmieciak, Malgorzata; Demeurisse, Caroline; Kottantharayil, Anil; Veloso, Anabela; Van Dal, Mark; Schram, Tom; Brijs, Bert; Kaiser, M.; Kubicek, Stefan; Cunniffe, John; Verbeeck, Rita; Vrancken, Christa; Biesemans, Serge; Maex, Karen (2005-05)