Browsing by author "Proost, Joris"
Now showing items 1-20 of 31
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A new approach for the measurement of resistivity and cross-sectional area of an aluminium interconnect line: principle and applications
Li, Hua; Jin, S.; Proost, Joris; Van Hove, Marleen; Froyen, L.; Maex, Karen (1998) -
A new scaling issue in the electrical behavior of damascene versus plasma-etched interconnects
Proost, Joris; Conard, Thierry; Boullart, Werner; Grillaert, Joost; Maex, Karen (1998) -
A novel approach to the short stripe effect in electromigration: modeling and experiment
Glickman, E.; Proost, Joris; Maex, Karen; Nathan, M.; Delaey, L. (2000) -
Al speed fill
Beyer, Gerald; Maex, Karen; Daniels, Stephen; Lee, S.; Proost, Joris; Bender, Hugo; Judelewicz, Moshe; Maity, Nirmalya (1999) -
Chemical and electrical characterization of the interaction of BCl 3/Cl2 etching and CF4/H2O stripping plasmas with aluminum surfaces
Proost, Joris; Li, H.; Conard, Thierry; Boullart, Werner; Maex, Karen (1999) -
Compensation effect during water desorption from siloxane-based spin-on dielectric thin films
Proost, Joris; Baklanov, Mikhaïl; Maex, Karen; Delaey, L. (2000) -
Control and impact of processing ambient during rapid thermal silicidation
Maex, Karen; Kondoh, Eiichi; Lauwers, Anne; Steegen, An; de Potter de ten Broeck, Muriel; Besser, Paul; Proost, Joris (1998) -
Critical role of degassing for hot aluminum filling
Proost, Joris; Kondoh, Eiichi; Vereecke, Guy; Heyns, Marc; Maex, Karen (1998) -
Effect of Cu on Al interfacial mass transport in bamboo rie and damscene (AlCu)
Proost, Joris; Li, H.; Witvrouw, Ann; Maex, Karen (1999) -
Effect of deposition parameters on the stress gradient of CVD and PECVD poly-SiGe for MEMS applications
Van der Donck, Tom; Proost, Joris; Rusu, Cristina; Baert, Kris; Van Hoof, Chris; Celis, Jean-Pierre; Witvrouw, Ann (2004-01) -
Electromigration behaviour of 0.3 μm damascene vs. plasma-etched interconnects: a lifetime and drift analysis
Proost, Joris; Li, Hua; Brijs, Bert; Witvrouw, Ann; Maex, Karen (1998) -
Electromigration issues for advanced Al interconnects
Proost, Joris (1998-12) -
Electromigration threshold in damascene versus plasma-etched interconnects
Proost, Joris; Maex, Karen; Delaey, L. (1998) -
Electromigration-induced drift in damascene and plasma-etched Al(Cu). I: Kinetics of Cu depletion in polycrystalline interconnects
Proost, Joris; Witvrouw, Ann; Maex, Karen; D'Haen, Jan; Cosemans, P. (2000) -
Electromigration-induced drift in damascene and plasma-etched Al(Cu). II: Mass transport mechanisms in bamboo interconnects
Proost, Joris; Maex, Karen; Delaey, L. (2000) -
Electromigration-induced drift in damascene vs. conventional interconnects: an intrinsic difference
Proost, Joris; Samajdar, I.; Witvrouw, Ann; Maex, Karen (1998) -
Incubation, time-dependent drift and saturation during Al-Si-Cu electromigration: modelling and implications for design
Witvrouw, Ann; Roussel, Philippe; Beyer, Gerald; Proost, Joris; Maex, Karen (1998) -
Microtexture and electromigration-induced drift in electroplated damascene Cu
Proost, Joris; Hirato, T.; Furuhara, T.; Maex, Karen; Celis, Jean-Pierre (2000) -
Modeling electromigration-induced stress evolution and drift kinetics with a stress-dependent diffusivity
Chizhik, S. A.; Matvienko, A. A.; Sidelnikov, A. A.; Proost, Joris (2000) -
Morphology of corrosion pits in aluminum thin film metallization
Proost, Joris; Baklanov, Mikhaïl; Verbeeck, Rita; Maex, Karen (1998)