Browsing by author "Lukyanchikova, N."

Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's

Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Claeys, Cor (1996)

Back-gate induced noise overshoot in partially-depleted SOI MOSFETs

Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2005)

Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques

Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2007)

Black-gate induced noise overshoot in partially-depleted SOI MOSFETs

Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004)

Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2004)

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Put, Sofie; Mehta, H.; Collaert, Nadine; Van Uffelen, M.; Leroux, P.; Claeys, Cor; Lukyanchikova, N.; Simoen, Eddy (2010)

Electrical characterisation of shallow cobalt-silicided junctions

Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2000)

Electrical characterization of shallow cobalt-silicided junctions

Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2001)

Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

Simoen, Eddy; Claeys, Cor; Lukyanchikova, N.; Gabar, N.; Smolanka, A. (2005)

Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs

Mercha, Abdelkarim; Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N. (2003)

Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias

Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004)

Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

Simoen, Eddy; Mercha, Abdelkarim; Rafi, Joan Marc; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2003)

Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs

Simoen, Eddy; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Martino, Joao Antonio; Sonnenberg, V. (1996)

Flicker noise in deep submicron nMOS transistors

Lukyanchikova, N.; Garbar, N.; Petrichuk, M.; Simoen, Eddy; Claeys, Cor (2000)

Flicker noise in submicron MOSFETS with 3.5 nm nitrided gate oxide

Simoen, Eddy; Da Rold, Martina; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N. (2001)

Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor transistors

Lukyanchikova, N.; Petrichuk, M. V.; Garbar, N.; Simoen, Eddy; Claeys, Cor (1997)

Impact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs

Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2003)

Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004)

Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages

Kudina, V.; Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2008)

Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs

Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Claeys, Cor (1997)