Browsing by author "Opdebeeck, Ann"

3D stacked IC demonstration using a through silicon via first approach

Van Olmen, Jan; Mercha, Abdelkarim; Katti, Guruprasad; Huyghebaert, Cedric; Van Aelst, Joke; Seppala, Emma; Zhao, Chao; Armini, Silvia; Vaes, Jan; Cotrin Teixeira, Ricardo; Van Cauwenberghe, Marc; Verdonck, Patrick; Verhemeldonck, Koen; Jourdain, Anne; Ruythooren, Wouter; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Chiarella, Thomas; Parvais, Bertrand; Debusschere, Ingrid; Hoffmann, Thomas Y.; De Wachter, Bart; Dehaene, Wim; Stucchi, Michele; Rakowski, Michal; Soussan, Philippe; Cartuyvels, Rudi; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2008)

A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06)

Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

Parihar, Narendra; Arutchelvan, Goutham; Franco, Jacopo; Baudot, Sylvain; Opdebeeck, Ann; Demuynck, Steven; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Mitard, Jerome; De Heyn, Vincent; Mercha, Abdelkarim (2021)

Degradation of clean Si-surfaces due to storage in clean (?) wafer boxes

Storm, Wolfgang; Vandervorst, Wilfried; Alay, Josep Lluis; Meuris, Marc; Opdebeeck, Ann; Heyns, Marc; Polleunis, C.; Bertrand, P. (1994)

Design issues and cosiderations for low-cost 3D TSV IC technology

Van der Plas, Geert; Limaye, Paresh; Mercha, Abdelkarim; Oprins, Herman; Torregiani, Cristina; Thijs, Steven; Linten, Dimitri; Stucchi, Michele; Guruprasad, Katti; Velenis, Dimitrios; Shinichi, Domae; Cherman, Vladimir; Vandevelde, Bart; Simons, Veerle; De Wolf, Ingrid; Labie, Riet; Perry, Dan; Bronckers, Stephane; Minas, Nikolaos; Cupak, Miroslav; Ruythooren, Wouter; Van Olmen, Jan; Phommahaxay, Alain; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Rakowski, Michal; De Wachter, Bart; Dehan, Morin; Nelis, Marc; Agarwal, Rahul; Dehaene, Wim; Travaly, Youssef; Marchal, Pol; Beyne, Eric (2010)

Direct yield prediction from SEM images

Choona, Lilach; Linshiz, Jasmine; Pres, Shaul; Levant, Boris; Tal, Noam; Santoro, Gaetano; Baudot, Sylvain; Opdebeeck, Ann; Reifsnider, Jason; Vadakupudhu Palayam, Senthil; Lorusso, Gian; Mitard, Jerome; Yogev, Shay (2023)

Effect of Fe contamination on quality of poly silicon gate structures

Mertens, Paul; De Gendt, Stefan; Depas, Michel; Kenis, Karine; Opdebeeck, Ann; Snee, Peter; Gräf, D.; Brown, G.; Heyns, Marc (1996)

First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs

Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11)

First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs

Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018)

Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015)

High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg

Capogreco, Elena; Arimura, Hiroaki; Vohra, Anurag; Porret, Clément; Loo, Roger; De Keersgieter, An; Dupuy, Emmanuel; Marinov, Daniil; Hikavyy, Andriy; Sebaai, Farid; Mannaert, Geert; Ragnarsson, Lars-Ake; Siew, Yong Kong; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Altamirano Sanchez, Efrain; Holsteyns, Frank; Demuynck, Steven; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019)

Important parameters influencing the rince efficiency of silicon wafers

Meuris, Marc; Opdebeeck, Ann; Cornelissen, Ingrid; Rotondaro, Antonio; Mertens, Paul; Heyns, Marc (1995)

Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability

Ortolland, Claude; Noda, Taiji; Chiarella, Thomas; Kubicek, Stefan; Kerner, Christoph; Vandervorst, Wilfried; Opdebeeck, Ann; Vrancken, Christa; Horiguchi, Naoto; de Potter de ten Broeck, Muriel; Aoulaiche, Marc; Rosseel, Erik; Felch, S.B.; Absil, Philippe; Schreutelkamp, Rob; Biesemans, Serge; Hoffmann, Thomas Y. (2008)

Overflow rinsing: a semiempirical model

Meuris, Marc; Opdebeeck, Ann; Mertens, Paul; Heyns, Marc (1994)

Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform

Zhou, Daisy; Waldron, Niamh; Boccardi, Guillaume; Sebaai, Farid; Merckling, Clement; Eneman, Geert; Sioncke, Sonja; Nyns, Laura; Opdebeeck, Ann; Maes, Jan; Xie, Qi; Givens, M; Tang, F; Jiang, X; Guo, Weiming; Kunert, Bernardette; Teugels, Lieve; Devriendt, Katia; Sibaja-Hernandez, Arturo; Franco, Jacopo; van Dorp, Dennis; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016)

Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Hikavyy, Andriy; Milenin, Alexey; Loo, Roger; De Keersgieter, An; Eneman, Geert; Schram, Tom; Wostyn, Kurt; Devriendt, Katia; Schulze, Andreas; Lieten, Ruben; Bilodeau, S; Cooper, E; Storck, Peter; Chiu, Eddy; Vrancken, Christa; Favia, Paola; Vancoille, Eric; Mitard, Jerome; Langer, Robert; Opdebeeck, Ann; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2017)

Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

Witters, Liesbeth; Sebaai, Farid; Hikavyy, Andriy; Milenin, Alexey; Loo, Roger; De Keersgieter, An; Eneman, Geert; Schram, Tom; Wostyn, Kurt; Devriendt, Katia; Schulze, Andreas; Lieten, Ruben; Bilodeau, S; Cooper, E; Storck, Peter; Vrancken, Christa; Arimura, Hiroaki; Favia, Paola; Vancoille, Eric; Mitard, Jerome; Langer, Robert; Opdebeeck, Ann; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2017-06)

The IMEC clean : A new concept for particle and metal removal on Si surfaces

Meuris, Marc; Mertens, Paul; Opdebeeck, Ann; Schmidt, Harald; Depas, Michel; Vereecke, Guy; Heyns, Marc; Philipossian, A. (1995)