Browsing by author "Bogaerts, Annemie"

A density functional theory simulation of the formation of Ni-doped fullerenes by ion

Neyts, Erik; Maeyens, Axel; Pourtois, Geoffrey; Bogaerts, Annemie (2011)

Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition

Mortet, Vincent; Zhang, Liang; Echert, Maxie; Soltani, Ali; D'Haen, Jan; Douheret, Olivier; Moreau, Myriam; Osswald, Sebastian; Neyts, Erik; Troadec, David; Wagner, Patrick; Bogaerts, Annemie; Van Tendeloo, Gustaaf; Haenen, Ken (2010)

Comparison of CF4, CHF3, and CH2F2 plasmas used for wafer processing

Tinck, Stefan; Milenin, Alexey; Bogaerts, Annemie (2012)

Computer simulations of SiCl4/O2 ICP discharges used for coatings deposition or mask damage recovery

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2012)

Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation

Samara, Vladimir; Van Laer, Koen; Tinck, Stefan; de Marneffe, Jean-Francois; Bogaerts, Annemie (2013)

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Tinck, Stefan; Boullart, Werner; Bogaerts, Annemie (2009)

Investigations on the plasma-surface interaction during atomic layer etching of thin transition-metal dichalcogenide films

Heyne, Markus; de Marneffe, Jean-Francois; Meersschaut, Johan; Nuytten, Thomas; Radu, Iuliana; Neyts, Erik C.; Bogaerts, Annemie; De Gendt, Stefan (2015)

Layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma: a modeling investigation

Tinck, Stefan; Altamirano Sanchez, Efrain; De Schepper, Peter; Bogaerts, Annemie (2014)

Mechanisms for plasma cryogenic etching of porous materials

Zhang, Quan-Zi; Tinck, Stefan; de Marneffe, Jean-Francois; Zhang, Liping; Bogaerts, Annemie (2017)

Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime

Zhang, Yu-Ru; Tinck, Stefan; De Schepper, Peter; Wang, You-Nian; Bogaerts, Annemie (2015)

Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2010)

Modeling fluorocarbon plasmas used for etching of Si

Tinck, Stefan; Milenin, Alexey; Bogaerts, Annemie (2013)

Modeling Sicl4/O2 plasmas used for depositing SiO2 coatings or mask recovery

Tinck, Stefan; Boullart, Werner; Bogaerts, Annemie (2012)

Modeling the influence of gas composition in an Ar/Cl2/O2 inductively coupled plasma used for STI etching

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2010)

New mechanism for oxidation of native silicon oxide

Khalilov, Umedjon; Pourtois, Geoffrey; Huygh, Stijn; van Duin, A.C.T.; Neyts, E.C.; Bogaerts, Annemie (2013)

Probing the impact of material properties of core-shell SiO2@TiO2 spheres on the plasma-catalytic CO2 dissociation using a packed bed DBD plasma reactor

Kaliyappan, Periyasamy; Paulus, Andreas; D'Haen, Jan; Samyn, Pieter; Uytdenhouwen, Yannick; Hafezkhiabani, Neda; Bogaerts, Annemie; Meynen, Vera; Elen, Ken; Hardy, An; Van Bael, Marlies (2021)

Simulating plasma + surface processes for the etching of silicon wtih an Ar/Cl2/O2 inductively coupled plasma

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2011)

Simulation of Ar/Cl2/O2 inductively coupled plasmas used for anisotropic etching of silicon

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2009)