Browsing by author "Bauer, Matthias"
Now showing items 1-11 of 11
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First electrical demonstration of DRAM compatible Ni silicides
Machkaoutsan, Vladimir; Bauer, Matthias; Zhang, Y.; Koelling, Sebastian; Franquet, Alexis; Vanormelingen, Koen; Verheyen, Peter; Loo, Roger; Kim, Chul Sung; Lauwers, Anne; Hoffmann, Thomas Y.; Absil, Philippe; Granneman, Ernst; Vandervorst, Wilfried; Thomas, Shawn. G (2009) -
Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference
De Jaeger, Brice; Kaczer, Ben; Zimmerman, Paul; Opsomer, Karl; Winderickx, Gillis; Van Steenbergen, Jan; Van Moorhem, Els; Terzieva, Valentina; Bonzom, Renaud; Leys, Frederik; Arena, Chantal; Bauer, Matthias; Werkhoven, Chris; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-01) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012) -
Leakage current study of Si1-xCx embedded source/drain junctions
Simoen, Eddy; Vissouvanadin Soubaretty, Bertrand; Taleb, Nadjib; Bargallo Gonzalez, Mireia; Verheyen, Peter; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Bauer, Matthias; Thomas, Shawn; Lu, J.-P.; Wise, Rick (2008) -
Maximization of active As doping (selective) epitaxial Si and SiGe layers
Loo, Roger; Bajolet, Philippe; Bauer, Matthias; Maes, Jan-Willem; Caymax, Matty; Arena, Chantal (2004-10) -
Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012) -
Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012-10) -
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Bauer, Matthias; Machkaoutsan, Vladimir; Zhang, Y.; Weeks, Doran; Spear, Jennifer; Thomas, Shawn; Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hikavyy, Andriy; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge (2008) -
Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Verheyen, Peter; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Doran; Kerner, Christoph; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas; Absil, Philippe; Biesemans, Serge; Thomas, Shawn G. (2008-06) -
Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge; Lu, Jiong-Ping; Wise, Rick; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Dorian; Thomas, Shawn (2008)