Browsing by author "Wang, Wei-E"
Now showing items 1-20 of 56
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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A fast and accurate method to study the impact of interface traps on germanium MOS performance
Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011) -
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, AliReza; Brammertz, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, Dennis; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2011) -
Capacitance-voltage (CV) characterization of GaAs-oxide interfaces
Brammertz, Guy; Martens, Koen; Lin, Dennis; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage (CV) characterization of GaAs/high-k oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Merckling, Clement; Penaud, J.; Alian, AliReza; Sioncke, Sonja; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2008) -
Capacitance-voltage (CV)characterization of GaAs-oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage characterization of GaAs-Al2O3 interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Sioncke, Sonja; Delabie, Annelies; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage characterization of GaAs-Oxide interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Catalytic forming gas anneal on III-V/Ge MOS sytems
Wang, Wei-E; Lin, Han-Chung; Brammertz, Guy; Delabie, Annelies; Simoen, Eddy; Caymax, Matty; Meuris, Marc; Heyns, Marc (2009) -
Combined reflectometry-ellipsometry technique to measure graphite down to monolayer thickness
Wang, Wei-E; Balooch, M.; Claypool, C.; Zawaideh, M.; Farnaam, K. (2009) -
Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Witters, Liesbeth; Mitard, Jerome; Veloso, Anabela; Hikavyy, Andriy; Franco, Jacopo; Kauerauf, Thomas; Cho, Moon Ju; Schram, Tom; Sebaai, Farid; Yamaguchi, Shinpei; Takeoka, S.; Fukuda, Masahiro; Wang, Wei-E; Duriez, Blandine; Eneman, Geert; Loo, Roger; Kellens, Kristof; Tielens, Hilde; Favia, Paola; Rohr, Erika; Hellings, Geert; Bender, Hugo; Roussel, Philippe; Crabbe, Yvo; Brus, Stephan; Mannaert, Geert; Kubicek, Stefan; Devriendt, Katia; De Meyer, Kristin; Ragnarsson, Lars-Ake; Steegen, An; Horiguchi, Naoto (2011) -
Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing
Chang, Yao-Chung; Merckling, Clement; Penaud, Julien; Lu, Chung-Yu; Wang, Wei-E; Dekoster, Johan; Meuris, Marc; Caymax, Matty; Heyns, Marc; Kwo, Raynien; Hong, Minghwei (2010) -
Electrical characterization of the MOS (metal-oxide-semiconductor) system: High mobility substrates
Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Nyns, Laura; Alian, AliReza; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Electrical properties of III-V/oxide interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Alian, AliReza; Merckling, Clement; Penaud, Julien; Kohen, David; Wang, Wei-E; Sioncke, Sonja; Delabie, Annelies; Meuris, Marc; Caymax, Matty; Heyns, Marc (2009) -
Electrical properties of III-V/oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Alian, AliReza; Merckling, Clement; Penaud, Julien; Kohen, David; Wang, Wei-E; Sioncke, Sonja; Delabie, Annelies; Meuris, Marc; Caymax, Matty; Heyns, Marc (2009) -
Electrical properties of InGaAs/high-k oxide interfaces: measurement and simulation
Brammertz, Guy; Lin, Dennis; Alian, AliReza; Merckling, Clement; Chang, Mark; Wang, Wei-E; Passlack, Matthias; Caymax, Matty; Meuris, Marc; Heyns, Marc (2010)