Browsing by author "Wang, Wei-E"
Now showing items 21-40 of 56
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Electrical quality of III-V/oxide interfaces: good enough for MOSFET devices?
Brammertz, Guy; Alian, AliReza; Lin, Dennis; Nyns, Laura; Sioncke, Sonja; Merckling, Clement; Wang, Wei-E; Caymax, Matty; Hoffmann, Thomas Y. (2011) -
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor
Lin, Dennis; Wang, Wei-E; Brammertz, Guy; Meuris, Marc; Heyns, Marc (2009) -
Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution
Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Fleischmann, Claudia; Delabie, Annelies; Martens, Koen; Bender, Hugo; Conard, Thierry; Tseng, Joshua; Lin, Vic; Wang, Wei-E; Temst, Kristiaan; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2009) -
Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Lin, Dennis; Waldron, Niamh; Brammertz, Guy; Martens, Koen; Wang, Wei-E; Sioncke, Sonja; Delabie, Annelies; Bender, Hugo; Conard, Thierry; Tseng, W.H.; Lin, S.C.; Temst, K.; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2010) -
Ge and III/V devices for advanced CMOS
Heyns, Marc; Adelmann, Christoph; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E (2009) -
Ge chemical vapor deposition on GaAs for low resistivity contacts
Vincent, Benjamin; Firrincieli, Andrea; Wang, Wei-E; Waldron, Niamh; Franquet, Alexis; Douhard, Bastien; Vandervorst, Wilfried; Clarysse, Trudo; Brammertz, Guy; Loo, Roger; Dekoster, Johan; Meuris, Marc; Caymax, Matty (2011) -
Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
Waldron, Niamh; Nguyen, Duy; Lin, Dennis; Brammertz, Guy; Vincent, Benjamin; Firrincieli, Andrea; Winderickx, Gillis; Sioncke, Sonja; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Meuris, Marc; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011) -
High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Leonelli, Daniele; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne; Wang, Wei-E (2009) -
High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Yamaguchi, Shinpei; Witters, Liesbeth; Mitard, Jerome; Eneman, Geert; Hellings, Geert; Fukuda, Masahiro; Hikavyy, Andriy; Loo, Roger; Veloso, Anabela; Crabbe, Yvo; Rohr, Erika; Favia, Paola; Bender, Hugo; Takeoka, S.; Vellianitis, Georgios; Wang, Wei-E; Ragnarsson, Lars-Ake; De Meyer, Kristin; Steegen, An; Horiguchi, Naoto (2011) -
High quality and low cost fabrication of virtual Ge substrates on STI patterned Si wafers
Loo, Roger; Wang, Gang; Mitard, Jerome; De Jaeger, Brice; Takeuchi, Shotaro; Eneman, Geert; Lin, Vic; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2009-09) -
High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E (2009) -
High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Heyns, Marc; Adelmann, Christoph; Brammertz, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E (2009) -
High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Mitard, Jerome; Witters, Liesbeth; Garcia Bardon, Marie; Christie, Phillip; Franco, Jacopo; Mercha, Abdelkarim; Magnone, Paolo; Crupi, Felice; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Vincent, Benjamin; Chiarella, Thomas; Loo, Roger; Tseng, Joshua; Yamaguchi, Shinpei; Takeoka, Shinji; Wang, Wei-E; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Eneman, Geert; Yamaguchi, Shinpei; Ortolland, Claude; Takeoka, Shinji; Witters, Liesbeth; Chiarella, Thomas; Favia, Paola; Hikavyy, Andriy; Mitard, Jerome; Kobayashi, M.; Krom, Raymond; Bender, Hugo; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Loo, Roger; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
Mitard, Jerome; Shea, C.; De Jaeger, Brice; Pristera, Andrea; Wang, Gang; Houssa, Michel; Eneman, Geert; Hellings, Geert; Wang, Wei-E; Lin, J.C.; Leys, Frederik; Loo, Roger; Winderickx, Gillis; Vrancken, Evi; Stesmans, Andre; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Meuris, Marc; Heyns, Marc (2009) -
Impact of Epi-Si growth temperature on Ge-pFET performance
Mitard, Jerome; Martens, Koen; De Jaeger, Brice; Franco, Jacopo; Shea, Chris; Plourde, Chelsea; Leys, Frederik; Loo, Roger; Hellings, Geert; Eneman, Geert; Wang, Wei-E; Lin, Vic; Kaczer, Ben; De Meyer, Kristin; Hoffmann, Thomas Y.; De Gendt, Stefan; Caymax, Matty; Meuris, Marc; Heyns, Marc (2009-09) -
Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Hellings, Geert; Witters, Liesbeth; Krom, Raymond; Mitard, Jerome; Hikavyy, Andriy; Loo, Roger; Schulze, Andreas; Eneman, Geert; Kerner, Christoph; Franco, Jacopo; Chiarella, Thomas; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Heyns, Marc; De Meyer, Kristin; Meuris, Marc; Hoffmann, Thomas Y. (2010) -
In-Situ HCl etching of InP in shallow-trench-isolated structures
Orzali, Tommaso; Wang, G.; Waldron, Niamh; Richard, Olivier; Bender, Hugo; Wang, Wei-E; Caymax, Matty (2011)