Browsing by author "Hikavyy, Andriy"
Now showing items 21-40 of 294
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Application of group IV epitaxy for production of gate all around transistors
Hikavyy, Andriy; Mertens, Hans; Witters, Liesbeth; Loo, Roger; Horiguchi, Naoto (2017) -
Application of group IV epitaxy in the advanced CMOS fabrication
Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Vohra, Anurag; Loo, Roger (2018) -
Application of HCl etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger; Caymax, Matty (2008) -
Application of HCl gas phase etch in the production of novel devices
Hikavyy, Andriy; Rooyackers, Rita; Verheyen, Peter; Leys, Frederik; Vellianitis, Georgios; Van Dal, Mark; Lander, Rob; Loo, Roger (2008-05) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Kubicek, Stefan; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Eneman, Geert; Loo, Roger (2013) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Loo, Roger (2013) -
Application of selective epitaxial growth in the sub 20 nm FinFET device fabrication
Hikavyy, Andriy; Rosseel, Erik; Eneman, Geert; Favia, Paola; Loo, Roger (2014) -
Application of single-wafer wet cleaning prior to epitaxial SiGe process
Sano, Ken-Ichi; Wada, Masayuki; Leys, Frederik; Loo, Roger; Hikavyy, Andriy; Mertens, Paul; Snow, Jim; Izumi, A.; Miya, Katsuhiko; Eitoku, Atsuro (2009) -
Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Rosseel, Erik; Everaert, Jean-Luc; Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vandervorst, Wilfried (2011) -
Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond
Hikavyy, Andriy; Clauws, P.; Vanbesien, K.; De Visschere, P.; Williams, Oliver; Daenen, M.; Haenen, Ken; Butler, J.E.; Feygelson, T. (2007) -
B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts
Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Ayyad, Mustafa; Morris, Richard; Khazaka, Rami; Loo, Roger; Vantomme, Andre (2022) -
B and Ga co-doping in epitaxial SiGe: challenges and opportunities
Porret, Clément; Rengo, Gianluca; Hikavyy, Andriy; Petersen Barbosa Lima, Lucas; Xie, Qi; Douhard, Bastien; Ayyad, Mustafa; Vantomme, André; Loo, Roger (2020) -
Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019) -
C atom distribution in Si:C and Si:C:P epitaxial layers studied using Raman spectroscopy
Dhayalan, Sathish Kumar; Nuytten, Thomas; Loo, Roger; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Vandervorst, Wilfried (2015-05) -
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
Simoen, Eddy; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Vrielinck, Henk; Lauwaert, Johan (2017) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019)