Browsing by author "Cubaynes, Florence"

45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004)

A manufacturable 25nm planar MOSFET technology

Ponomarev, Youri; Loo, Josine; Dachs, Charles; Cubaynes, Florence; Verheijen, M. A.; Kaiser, M.; van Berkum, J. G. M.; Kubicek, Stefan; Bolk, J.; Rovers, Madelon (2001)

A practical baseline process for advanced CMOS devices research

Ponomarev, Youri; Loo, Josine; Rittersma, Chris; Lander, Rob; Hooker, Jacob; Doornbos, Gerben; Surdeanu, Radu; Cubaynes, Florence; Dachs, Charles; Kubicek, Stefan; Henson, Kirklen; Lindsay, Richard (2003)

Advanced PMOS device architecture for highly-doped ultra-shallow junctions

Surdeanu, Radu; Pawlak, Bartek; Lindsay, Richard; Van Dal, Mark; Doornbos, Gerben; Dachs, C.J.J.; Ponomarev, Youri; Loo, Josine; Cubaynes, Florence; Henson, Kirklen; Verheijen, M.A.; Kaiser, M.; Pagès, Xavier; Stolk, Peter; Jurczak, Gosia (2004)

Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

Subramanian, Vaidy; Parvais, Bertrand; Borremans, Jonathan; Mercha, Abdelkarim; Linten, Dimitri; Wambacq, Piet; Loo, Josine; Dehan, Morin; Collaert, Nadine; Kubicek, Stefan; Lander, Rob; Hooker, Jacob; Cubaynes, Florence; Donnay, Stephane; Jurczak, Gosia; Groeseneken, Guido; Sansen, Willy; Decoutere, Stefaan (2005)

Further optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS

Kraus, Philip; Chua, Tai Chen; Rothschild, Aude; Cubaynes, Florence; Veloso, Anabela; Mertens, Sofie; Date, Lucien; Bauer, Thomas; Ahmed, Khaled; Nouri, Faran; Schreutelkamp, Rob; Schaekers, Marc (2004)

Gate dielectrics for high performance and low power CMOS SoC applications

Cubaynes, Florence; Dachs, Charles; Detcheverry, Celine; Zegers, A.; Venezia, Vincent; Schmitz, Jurriaan; Stolk, Peter; Jurczak, Gosia; Henson, Kirklen; Degraeve, Robin; Rothschild, Aude; Conard, Thierry; Pétry, Jasmine; Da Rold, Martina; Schaekers, Marc; Badenes, Gonçal; Date, L.; Pique, D.; Al-Shareef, H.; Murto, R. (2002)

In-line electrical characterization of furnace and plasma and plasma nitrided gate dielectric films

Eason, K.; Passefort, Sophie; Zhang, X.; Cubaynes, Florence; Schaekers, Marc (2002)

Optimal frequency range selection for full C-V characterization above 45MHz for ultra thin (1.2-nm) nitrided oxide MOSFETs

Jeamsaksiri, Wutthinan; Mercha, Abdelkarim; Ramos, Javier; Decoutere, Stefaan; Cubaynes, Florence (2004)

Physical properties of thin nitrided Hf silicates and their impact on the performance of advanced transistors having a TaN metal gate electrode

Cubaynes, Florence; van der marel, C.; Hopstaken, M.J.P.; Van Elshocht, Sven; Everaert, Jean-Luc; Schaekers, Marc (2005)

Plasma nitridation optimization sub-15A gate dielectrics

Cubaynes, Florence; Schmitz, Jurriaan; van der marel, C.; Snijders, H.; Veloso, Anabela; Rothschild, Aude; Olsen, C.; Date, Lucien (2003)

Plasma nitrided silicon rich oxide as an extension to ultra-thin nitrided oxide gate dielectrics

Cubaynes, Florence; Venezia, V.; Everaert, Jean-Luc; Shi, Xiaoping; Rothschild, Aude; Schaekers, Marc (2004)

RFCV test structures for a selected frequency range

Jeamsaksiri, Wutthinan; Mercha, Abdelkarim; Ramos, Javier; Decoutere, Stefaan; Cubaynes, Florence (2005)

RPN oxynitride gate dielectrics for 90nm low power CMOS applications

Veloso, Anabela; Jurczak, Gosia; Cubaynes, Florence; Rooyackers, Rita; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Al-Shareef, H.; Murto, R.; Dachs, Charles; Badenes, Gonçal (2002)

Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

Rothschild, Aude; Kraus, P.A.; Chua, T.C.; Nouri, F.; Cubaynes, Florence; Veloso, Anabela; Mertens, Sofie; Date, Lucien; Schreutelkamp, Rob; Schaekers, Marc (2004)

Tantalum-based gate electrode metals for advanced CMOS devices

Hooker, Jacob; Lander, Rob; Cubaynes, Florence; Schram, Tom; Roozeboom, F.; van Zijl, J.; Maas, M.; van den Heuvel, F.C.; Naburgh, E.; van Berkum, J.G.M.; Tamminga, Y.; Dao, T.; Henson, Kirklen; Schaekers, Marc; Van Ammel, Annemie; Tokei, Zsolt; Demand, Marc; Dachs, C. (2005)

Ultra thin plasma nitrided oxides for sub-100nm CMOS

Rothschild, Aude; Veloso, Anabela; Mertens, Sofie; Schaekers, Marc; Cubaynes, Florence; Date, Lucien; Pique, Didier (2002)

Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications

Veloso, Anabela; Cubaynes, Florence; Rothschild, Aude; Mertens, Sofie; Degraeve, Robin; O'Connor, Robert; Olsen, Chris; Date, Lucien; Schaekers, Marc; Dachs, Charles; Jurczak, Gosia (2003)