Browsing by author "Witters, Thomas"
Now showing items 21-40 of 86
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Effective metal gate work function modification by ion implantation with W-based gate stack
Li, Zilan; Schram, Tom; Kerner, Christoph; Witters, Thomas; Singanamalla, Raghunath; Pourtois, Geoffrey; Paraschiv, Vasile; Hoffmann, Thomas Y.; Rohr, Erika; Absil, Philippe; De Gendt, Stefan; De Meyer, Kristin (2008) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour
Kaushik, Vidya; Röhr, Erika; De Gendt, Stefan; Delabie, Annelies; Van Elshocht, Sven; Claes, Martine; Shimamoto, Yasuhiro; Ragnarsson, Lars-Ake; Witters, Thomas; Manabe, Y.; Heyns, Marc (2003) -
Engineering and stack optimization of Cu-based selector devices for low power SCM applications
Barci, Marinela; Fantini, Andrea; Redolfi, Augusto; Kundu, Shreya; Devulder, Wouter; Opsomer, Karl; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar; Witters, Thomas (2018) -
Evaluation of Nb(Si)N as metal gate material
Van Hoornick, Nausikaa; De Witte, Hilde; Witters, Thomas; Zhao, Chao; Conard, Thierry; Huatori, H.; Swerts, Johan; Schram, Tom; Maes, Jan; De Gendt, Stefan; Heyns, Marc (2005) -
Exploration of Scandium Doping in Sb2Te3 for Phase Change Memory Application
Barci, Marinela; Leonelli, Daniele; Zhou, Xue; Wang, Xiaojie; Garbin, Daniele; Jayakumar, Ganesh; Witters, Thomas; Franchina Vergel, Nathali; Kundu, Shreya; Vadakupudhu Palayam, Senthil; Jiao, Huifang; Wu, Hao; Kar, Gouri Sankar (2022-11) -
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Li, Zilan; Schram, Tom; Pantisano, Luigi; Witters, Thomas; Stesmans, Andre; Akheyar, Amal; Afanasiev, Valeri; Yamada, Naoki; Tsunoda, Takaaki; De Gendt, Stefan; De Meyer, Kristin (2007) -
Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
Van Elshocht, Sven; Caymax, Matty; De Gendt, Stefan; Conard, Thierry; Petry, Jasmine; Claes, Martine; Witters, Thomas; Zhao, Chao; Brijs, Bert; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Carter, Richard; Kluth, Jon; Daté, L.; Pique, D.; Heyns, Marc (2003) -
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
Avasarala, Naga Sruti; Donadio, Gabriele Luca; Witters, Thomas; Opsomer, Karl; Govoreanu, Bogdan; Fantini, Andrea; Clima, Sergiu; Oh, Hyungrock; Kundu, Shreya; Devulder, Wouter; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2018) -
High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
Zhang, Leqi; Redolfi, Augusto; Crotti, Davide; Adelmann, Christoph; Clima, Sergiu; Chen, Yangyin; Opsomer, Karl; Subhechha, Subhali; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Govoreanu, Bogdan; Cosemans, Stefan; Richard, Olivier; Bender, Hugo; Hendrickx, Paul; Witters, Thomas; Hody, Hubert; Paraschiv, Vasile; Radu, Iuliana (2014) -
High-k gate stack engineering – towards meeting low standby power and high performance targets
De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013) -
Impact of PVD barrier deposition sequence on ultra low-k dielectrics
Krishtab, Mikhail; Witters, Thomas; De Gendt, Stefan; Baklanov, Mikhaïl (2016) -
Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
Redolfi, Augusto; Velenis, Dimitrios; Thangaraju, Sarasvathi; Nolmans, Philip; Jaenen, Patrick; Kostermans, Maarten; Baier, Ulrich; Van Besien, Els; Dekkers, Harold; Witters, Thomas; Jourdan, Nicolas; Van Ammel, Annemie; Vandersmissen, Kevin; Rodet, Simon; Philipsen, Harold; Radisic, Alex; Heylen, Nancy; Travaly, Youssef; Swinnen, Bart; Beyne, Eric (2011-06) -
Implementation of high-k gate dielectrics - a status update
De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003) -
Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
Li, Zilan; Schram, Tom; Stesmans, Andre; Franquet, Alexis; Witters, Thomas; Pantisano, Luigi; Yamada, Naoki; Tsunoda, Takaaki; Hooker, Jacob; De Gendt, Stefan; De Meyer, Kristin (2008) -
Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning
De Gendt, Stefan; Beckx, Stephan; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kraus, Harald; Onsia, Bart; Paraschiv, Vasile; Puurunen, Riikka; Röhr, Erika; Snow, Jim; Tsai, Wilman; Van Doorne, Patrick; Van Elshocht, Sven; Vertommen, Johan; Witters, Thomas; Heyns, Marc (2003) -
Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
De Gendt, Stefan; Beckx, Stephan; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Hellin, David; Kraus, Harald; Onsia, Bart; Paraschiv, Vasile; Puurunen, Riikka; Rohr, Erika; Snow, Jim; Tsai, Wilman; Van Doorne, Patrick; Van Elshocht, Sven; Vertommen, Johan; Witters, Thomas; Heyns, Marc (2004) -
Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2
Deweerd, Wim; Schram, Tom; Van Hoornick, Nausikaa; Witters, Thomas; Lisoni, Judit; Rohr, Erika; De Gendt, Stefan; Heyns, Marc; Schaekers, Marc; Richard, Olivier; Wickramanayaka, Sunil; Yamada, N.; Brunco, David (2005)