Browsing by author "Lindsay, Richard"
Now showing items 21-40 of 77
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Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
Pawlak, Bartek; Lindsay, Richard; Surdeanu, Radu; Dieu, Bjorn; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Duffy, Ray; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried (2004) -
CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Dachs, Charles; Surdeanu, Radu; Pawlak, Bartek; Doornbos, Gerben; Duffy, R.; Heringa, Anco; Ponomarev, Youri; Venezia, Vincent; Van Dal, Mark; Stolk, P.; Lindsay, Richard; Henson, Kirklen; Dieu, B.; Geenen, Luc; Hoflijk, Ilse; Richard, Olivier; Clarysse, Trudo; Brijs, Bert; Vandervorst, Wilfried; Pagès, Xavier (2003) -
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Akheyar, Amal; Lauwers, Anne; Kittl, Jorge; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Jonckheere, Rik; Leunissen, Peter; Van Dal, Mark; Lindsay, Richard; Tempel, Georg; Maex, Karen (2003) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Stucchi, Michele; Vrancken, Christa; Deweerdt, Bruno; Maex, Karen (1999) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Jin, S.; Bender, Hugo; Stucchi, Michele; Vrancken, Evi; Deweerdt, Bruno; Maex, Karen (2000) -
Device characteristics of ultra-shallow junctions formed by fRTP annealing
Satta, Alessandra; Lindsay, Richard; Severi, Simone; Henson, Kirklen; Maex, Karen; McCoy, S.; Gelpey, J.; Elliott, K. (2004) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2001) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2002) -
Effect of varying the initial conditions prior to flash-assist rapid thermal processing on dopant activation, diffusion, and defect populations
Camillo-Castillo, Renata; Law, M.E.; Lindsay, Richard; Maex, Karen; Pawlak, Bartek; McCoy, S. (2005) -
Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devices
Severi, Simone; Henson, Kirklen; Lindsay, Richard; De Meyer, Kristin (2004-01) -
Electrical activity of B and As segregated at the Si-SiO2 interface
Fruehauf, Jens; Lindsay, Richard; Bergmaier, Andreas; Vandervorst, Wilfried; Tempel, Georg; Maex, Karen; Dollinger, Günther; Koch, Frederick (2002) -
Electrical performance and scalability of Ni-monosilicide towards sub 0.13 μm technologies
Lauwers, A.; de Potter de ten Broeck, Muriel; Lindsay, Richard; Steegen, An; Roelandts, Nico; Lossen, F.; Vrancken, Christa; Maex, Karen (2001) -
Elevated co-silicide for sub-100nm high performance and RF CMOS
Jurczak, Gosia; de Potter de ten Broeck, Muriel; Rooyackers, Rita; Jeamsaksiri, Wutthinan; Redolfi, Augusto; Grau, Lluis; Lauwers, Anne; Lindsay, Richard; Peytier, Ivan; Augendre, Emmanuel; Badenes, Gonçal (2002) -
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
Pawlak, Bartek; Surdeanu, Radu; Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lindsay, Richard; Vandervorst, Wilfried; Brijs, Bert; Richard, Olivier; Cristiano, F. (2004) -
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
De Jaeger, Brice; Houssa, Michel; Satta, Alessandra; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Croon, Jeroen; Kaczer, Ben; Van Elshocht, Sven; Delabie, Annelies; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, Ivo; Lindsay, Richard; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.L.; Afanas'ev, V.; Stesmans, A.; Meuris, Marc; Heyns, Marc (2004) -
Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Meuris, Marc; De Jaeger, Brice; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Lujan, Guilherme; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, I; Van Elshocht, Sven; Delabie, Annelies; Lindsay, Richard; Satta, Alessandra; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Richard, Olivier; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Houssa, Michel; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2004) -
Integrating diffusionless anneals into advanced CMOS technologies
Surdeanu, Radu; Lindsay, Richard; Severi, Simone; Satta, Alessandra; Pawlak, Bartek; Lauwers, Anne; Dachs, C.J.J.; Henson, Kirklen; McCoy, S.; Gelpey, J.C. (2004) -
Integration of low and high temperature junction anneals for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Henson, Kirklen; Satta, Alessandra; Severi, Simone; Lauwers, Anne; Surdeanu, Radu; McCoy, S.; Gelpey, J.; Pagès, Xavier; Maex, Karen (2004) -
Intra-die temperature non uniformity related to front side emissivity depandence during rapid thermal annealing
Laviron, C.; Lindsay, Richard; Michallet, A.; Halimaoui, A.; Granneman, E. (2003) -
Junction and profile analysis using carrier illumination
Clarysse, Trudo; Vandervorst, Wilfried; Lindsay, Richard; Borden, P.; Budiarto, E.; Madsen, J.; Nijmeijer, R. (2002)