Browsing by author "Swerts, Johan"
Now showing items 41-60 of 250
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BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
Challenges for scaled damascene interconnects
Armini, Silvia; Swerts, Johan; Siew, Yong Kong; Vereecken, Philippe; Boemmels, Juergen; Struyf, Herbert; Tokei, Zsolt (2013) -
Characterization of porous structures in advanced low-k films with thin TaN layers using monoenergetic positron beams
Uedono, Akira; Verdonck, Patrick; Delabie, Annelies; Swerts, Johan; Witters, Thomas; Conard, Thierry; Baklanov, Mikhaïl; Van Elshocht, Sven; Oshima, Nagayasu; Suzuki, Ryoichi (2013) -
Chemisorption of ALD precursors in and on porous low-k films
Verdonck, Patrick; Delabie, Annelies; Swerts, Johan; Farrell, Leo; Baklanov, Mikhaïl; Tielens, Hilde; Van Besien, Els; Witters, Thomas; Nyns, Laura; Van Elshocht, Sven (2013) -
CMOS-compatible dielectric constant engineering by embedding metallic particles in aluminum oxide
Put, Brecht; Adelmann, Christoph; Swerts, Johan; Rooyackers, Rita; Tielens, Hilde; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana (2013) -
CMP process steps for the fabrication of spin-transfer torque magnetic random access memory
Tsvetanova, Diana; Heylen, Nancy; Teugels, Lieve; Crotti, Davide; Donadio, Gabriele Luca; Kar, Gouri Sankar; Struyf, Herbert; Souriau, Laurent; Mertens, Sofie; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Paraschiv, Vasile; Kim, Woojin; Rao, Siddharth (2016) -
Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application
Kar, Gouri Sankar; Kim, Woojin; Tahmasebi, Taiebeh; Swerts, Johan; Mertens, Sofie; Heylen, Nancy; Min, Tai (2014) -
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
Liu, Enlong; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Tomczak, Yoann; Lin, Tsann; Spampinato, Valentina; Franquet, Alexis; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Compositional study of BaSrTiO thin films for memory application
Tomida, Kazuyuki; Opsomer, Karl; Vrancken, Christa; Matero, Raija; Tois, Eva; Kaczer, Ben; Pawlak, Malgorzata; Popovici, Mihaela Ioana; Swerts, Johan; Van Elshocht, Sven; Detavernier, Christophe; Kim, Min-Soo; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Vaysset, Adrien; Swerts, Johan; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Swerts, Johan; Vaysset, Adrien; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium
Popovici, Mihaela Ioana; Swerts, Johan; Tomida, Kazuyuki; Radisic, Dunja; Kim, Min-Soo; Kaczer, Ben; Richard, Olivier; Bender, Hugo; Delabie, Annelies; Moussa, Alain; Vrancken, Christa; Opsomer, Karl; Franquet, Alexis; Pawlak, Malgorzata; Schaekers, Marc; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks
Swerts, Johan; Mertens, Sofie; Couet, Sebastien; Lin, Tsann; Liu, Enlong; Rao, Siddharth; Kim, Woojin; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; Nishimura, Kazumasa; Okuyama, Hiroki; Seino, Takuya; Tsunekawa, Koji (2016) -
Detailed characterization of the effects of plasma treatments on an advanced 2.0 low-k material
Verdonck, Patrick; Maheshwari, Abhishek; Swerts, Johan; Tielens, Hilde; Franquet, Alexis; Loyo Prado, Jana; Armini, Silvia; Baklanov, Mikhaïl; Van Elshocht, Sven; Uedono, Akira; Roque Huanca, Danilo; Gomes dos Santos Filho, Sebastiao; Kellerman, Guinther (2013) -
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations
Clima, Sergiu; Kaczer, Ben; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Swerts, Johan; Verhulst, Anne; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2013) -
Diffusion control in top-pinned STT-MRAM devices
Carpenter, Robert; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Rao, Siddharth; Kundu, Shreya; Kar, Gouri Sankar (2019) -
Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and ½ pitch lines: from coupon to full-wafer experiments
Armini, Silvia; Demuynck, Steven; El-Mekki, Zaid; Swerts, Johan; Nagar, Magi; Radisic, Alex; Heylen, Nancy; Beyer, Gerald; Leunissen, Peter; Vereecken, Philippe (2011-05) -
Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and ½ pitch lines: from coupon to full-wafer experiments
Armini, Silvia; El-Mekki, Zaid; Swerts, Johan; Nagar, Magi; Demuynck, Steven (2013)