Browsing by author "Meuris, Marc"
Now showing items 41-60 of 502
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Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, AliReza; Brammertz, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, Dennis; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2011) -
Analysis of junction leakage in advanced germanium p+/n junctions
Eneman, Geert; Sicart i Casain, Oriol; Simoen, Eddy; Brunco, David; De Jaeger, Brice; Satta, Alessandra; Nicholas, Gareth; Claeys, Cor; Meuris, Marc; Heyns, Marc (2007) -
Analytical model and Monte Carlo simulations for phosphorus implantation in germanium including ion channeling
Hellings, Geert; Eneman, Geert; Meuris, Marc; De Meyer, Kristin (2008) -
Annual energy yield: a comparison between various monolithic and mechanically stacked multijunction solar cells
Mols, Yves; Zhao, Lu; Flamand, Giovanni; Meuris, Marc; Poortmans, Jef (2012) -
Applicability of charge pumping on Germanium MOSFETs
Martens, Koen; Kaczer, Ben; Grasser, Tibor; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2008) -
Application of moist ozone gas phase for removal of resist and organic contamination in a novel tank type processor
Wolke, K.; Riedel, T.; Haug, Rainer; De Gendt, Stefan; Heyns, Marc; Meuris, Marc (2000) -
Application of moist ozone gasphase for removal of resist and organic contamination in a novel tank-type processor
Haug, Rainer; Cornelissen, Ingrid; Claes, Martine; De Gendt, Stefan; Wolke, K.; Meuris, Marc; Heyns, Marc (1999) -
Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Delabie, Annelies; Brunco, David; Conard, Thierry; Favia, Paola; Bender, Hugo; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Kim, Eunji; McIntyre, Paul C.; Saraswat, Krishna C.; LeBeau, James M.; Cagnon, Joel; Stemmer, Susanne; Tsai, Wilman (2008) -
Atomic layer deposition of hafnium oxide on germanium substrates
Delabie, Annelies; Puurunen, R.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc; Meuris, Marc; Viitanan, Minna M.; Brongersma, Hidde H.; De Ridder, M.; Goncharova, L.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman (2005) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre; Heyns, Marc; Meuris, Marc (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Caymax, Matty; Bellenger, Florence; Brammertz, Guy; Conard, Thierry; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Brunco, David; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre (2008) -
Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011) -
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology
Pourghaderi, Mohammad Ali; Magnus, Wim; Soree, Bart; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2009) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Clemente, Francesca; Satta, Alessandra; Meuris, Marc (2008) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Meuris, Marc (2007) -
Bias dependent admittance spectroscopy of thin film solar cells: KF post deposition treatment, accelerated lifetime testing, and their effect on the CVf loss maps
Kohl, Thierry; Brammertz, Guy; de Wild, Jessica; Buldu, Dilara Gokcen; Birant, Gizem; Meuris, Marc; Poortmans, Jef; Vermang, Bart (2021) -
Bias dependent admittance spectroscopy: the impact of sodium supply on the Cu(In,Ga)Se-2 growth
Kohl, Thierry; de Wild, Jessica; Brammertz, Guy; Buldu, Dilara Gokcen; Birant, Gizem; van der Vleuten, M.; Simor, M.; Eachambadi, R. T.; Manca, J.; Meuris, Marc; Poortmans, Jef; Vermang, Bart (2021) -
Bias-dpendant admittance spectroscopy of thin-film solar cells: Experiment and simulation
Brammertz, Guy; Kohl, Thierry; de Wild, Jessica; Buldu, Dilara Gokcen; Birant, Gizem; Meuris, Marc; Poortmans, Jef; Vermang, Bart (2020)