Browsing by author "Kubicek, Stefan"
Now showing items 61-80 of 181
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Gate-all-around transistors based on vertically stacked Si nanowires
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Mannaert, Geert; De Keersgieter, An; Vaisman Chasin, Adrian; Kubicek, Stefan; Dangol, Anish; Demuynck, Steven; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto (2017) -
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
De Jaeger, Brice; Houssa, Michel; Satta, Alessandra; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Croon, Jeroen; Kaczer, Ben; Van Elshocht, Sven; Delabie, Annelies; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, Ivo; Lindsay, Richard; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.L.; Afanas'ev, V.; Stesmans, A.; Meuris, Marc; Heyns, Marc (2004) -
Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line
Meuris, Marc; De Jaeger, Brice; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Lujan, Guilherme; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, I; Van Elshocht, Sven; Delabie, Annelies; Lindsay, Richard; Satta, Alessandra; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Richard, Olivier; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Houssa, Michel; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2004) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
High performance raised gate/source/drain transistors for sub-0.15 μm CMOS technologies
van Meer, Hans; Kubicek, Stefan; Lyu, Jeong-ho; Caymax, Matty; Loo, Roger; De Meyer, Kristin (1999) -
High-k dielectrics integration prospects
Kubicek, Stefan; Van Elshocht, Sven; Delabie, Annelies; Yamamoto, Kazuhiko; Beckx, Stephan; Claes, Martine; Van Hoornick, Nausikaa; Kwak, Dong Hwa; Hyun, Sangjin; Rothschild, Aude; Veloso, Anabela; Kottantharayil, Anil; Lujan, Guilherme; Kittl, Jorge; Lauwers, Anne; Kaushik, Vidya; Niwa, Masaaki; De Gendt, Stefan; Heyns, Marc; Jurczak, Gosia; Biesemans, Serge (2005) -
High-k gate stack engineering – towards meeting low standby power and high performance targets
De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005) -
Impact of ALCVD and PVD titanium nitride deposition on metal gate capacitors
Lujan, Guilherme; Schram, Tom; Pantisano, Luigi; Hooker, Jacob; Kubicek, Stefan; Röhr, Erika; Schuhmacher, Jörg; Kilpela, Olli; Sprey, Hessel; De Gendt, Stefan; De Meyer, Kristin (2002) -
Impact of channel engineering technology on HC performance of 100 nm MOSFETs
Okhonin, S.; Fazan, P.; Kubicek, Stefan; Henson, Kirklen; De Meyer, Kristin; Ponomarev, Youri (2001) -
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Kaczer, Ben; Degraeve, Robin; Groeseneken, Guido; Rasras, Mahmoud; Kubicek, Stefan; Vandamme, Ewout; Badenes, Gonçal (2000) -
Impact of through silicon via induced mechanical stress on fully depleted bulk FinFET technology
Guo, Wei; Van der Plas, Geert; Ivankovic, Andrej; Cherman, Vladimir; Eneman, Geert; De Wachter, Bart; Togo, Mitsuhiro; Redolfi, Augusto; Kubicek, Stefan; Civale, Yann; Chiarella, Thomas; Vandevelde, Bart; Croes, Kristof; De Wolf, Ingrid; Debusschere, Ingrid; Mercha, Abdelkarim; Thean, Aaron; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2012) -
Implementation of high-k gate dielectrics - a status update
De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003) -
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature phosphorus extension ion implantation
Kikuchi, Yoshiaki; Hopf, Toby; Mannaert, Geert; Everaert, Jean-Luc; Kubicek, Stefan; Eyben, Pierre; Waite, Andrew; Borniquel, Jose; Variam, Naushad; Mocuta, Dan; Horiguchi, Naoto (2019) -
Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
Kikuchi, Yoshiaki; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Waite, A.; Cournoyer, J.; Borniquel, J.; Schreutelkamp, Rob; Ritzenthaler, Romain; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Devriendt, Katia; Schram, Tom; Demuynck, Steven; Variam, N.; Horiguchi, Naoto; Mocuta, Dan (2016) -
Integration of SiGe in the p-MOS fin based FETs
Hikavyy, Andriy; Rosseel, Erik; Kubicek, Stefan; Mannaert, Geert; Favia, Paola; Bender, Hugo; Loo, Roger; Horiguchi, Naoto (2015-05) -
Interface passivation mechanisms in metal gated oxide capacitors
Lujan, Guilherme; Schram, Tom; Sjoblom, G.; Witters, Thomas; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2004-11) -
Investigation of forming and its controllability in novel HfO2-based 1T1R 40nm-crossbar RRAM cells
Govoreanu, Bogdan; Kubicek, Stefan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Rakowski, Michal; Degraeve, Robin; Goux, Ludovic; Clima, Sergiu; Jossart, Nico; Adelmann, Christoph; Richard, Olivier; Raes, Thomas; Vangoidsenhoven, Diziana; Vandeweyer, Tom; Tielens, Hilde; Kellens, Kristof; Devriendt, Katia; Heylen, Nancy; Brus, Stephan; Verbrugge, Beatrijs; Pantisano, Luigi; Bender, Hugo; Pourtois, Geoffrey; Kittl, Jorge; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2011) -
Investigation of instrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides
Kubicek, Stefan; Henson, W. K.; De Keersgieter, An; Badenes, Gonçal; Jansen, Philippe; van Meer, Hans; Kerr, Daniel; Naem, Abdalla; Deferm, Ludo; De Meyer, Kristin (1999) -
Investigation of performance improvement and gate-to-junction leakage reduction fot the 90nm CMOS gate stack architecture
Henson, Kirklen; Kubicek, Stefan; Redolfi, Augusto; De Meyer, Kristin; Jurczak, Gosia; Augendre, Emmanuel (2002)