Browsing imec Publications by author "Machkaoutsan, Vladimir"
Now showing items 1-20 of 52
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80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2021) -
80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Bargallo Gonzalez, Mireia; Thomas, Nicole; Simoen, Eddy; Verheyen, Peter; Hikavyy, Andriy; Leys, Frederik; Okuno, Yasutoshi; Vissouvanadin Soubaretty, Bertrand; Van Daele, Benny; Geenen, Luc; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2007) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Amat, E.; Rodriguez, R.; Gonzalez, Mario; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, Peter; Simoen, Eddy (2010) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
Amat, Esteve; Rodriguez, Rosana; Bargallo Gonzalez, Mireia; Martin Martinez, Javier; Nafria, Montse; Aymerich, Xavier; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, (2010) -
CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits
Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto (2018) -
Cost effective FinFET platform for stand alone DRAM 1Y and beyond memory periphery
Spessot, Alessio; Sharan, Neha; Oh, Hyungrock; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Mallik, Arindam; De Keersgieter, An; Parvais, Bertrand; Sherazi, Yasser; Machkaoutsan, Vladimir; Kim, Cheolgyu; Fazan, Pierre; Mocuta, Dan; Mocuta, Anda; Horiguchi, Naoto (2018-01) -
Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers
Machkaoutsan, Vladimir; Verheyen, Peter; Bauer, M.; Zhang, Y.; Koelling, Sebastian; Franquet, Alexis; Vanormelingen, Koen; Loo, Roger; Kim, C.S.; Lauwers, Anne; Horiguchi, Naoto; Kerner, Christoph; Hoffmann, Thomas; Granneman, E.; Vandervorst, Wilfried; Absil, Philippe; Thomas, S.G. (2010) -
Electrical performance comparison of embedded Si1-xGex source/drain junctions processed in 200 mm and 300 mmEpi-reactors
Bargallo Gonzalez, Mireia; Simoen, Eddy; Hikavyy, Andriy; Verheyen, Peter; Loo, Roger; Caymax, Matty; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Wise, R.; Claeys, Cor (2008) -
Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks
Maes, Jan; Machkaoutsan, Vladimir; Pierreux, Dieter; Blomberg, Tom; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Delabie, Annelies; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake (2010) -
Extreme scaled gate dielectrics by using ALD Hf-based composite materials
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Factors influencing the leakage current in embedded SiGe source/drain junctions
Simoen, Eddy; Bargallo Gonzalez, Mireia; Vissouvanadin Soubaretty, Bertrand; Chowdhury, Mohammad Kamruzzaman; Verheyen, Peter; Hikavyy, Andriy; Bender, Hugo; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2008) -
First electrical demonstration of DRAM compatible Ni silicides
Machkaoutsan, Vladimir; Bauer, Matthias; Zhang, Y.; Koelling, Sebastian; Franquet, Alexis; Vanormelingen, Koen; Verheyen, Peter; Loo, Roger; Kim, Chul Sung; Lauwers, Anne; Hoffmann, Thomas Y.; Absil, Philippe; Granneman, Ernst; Vandervorst, Wilfried; Thomas, Shawn. G (2009) -
Gate stack engineering to enhance high- $j/metal gate reliability for DRAM I/O applications
O'Sullivan, Barry; Ritzenthaler, Romain; Simoen, Eddy; Dentoni Litta, Eugenio; Schram, Tom; Vaisman Chasin, Adrian; Linten, Dimitri; Horiguchi, Naoto; Machkaoutsan, Vladimir; Fazan, Pierre; Li, Y (2017) -
Gate-stack engineered NBTI improvements in high-voltage logic-for-memory high-k/metal gate devices
O'Sullivan, Barry; Ritzenthaler, Romain; Rzepa, G; Wu, Zhicheng; Dentoni Litta, Eugenio; Richard, Olivier; Conard, Thierry; Machkaoutsan, Vladimir; Fazan, Pierre; Kim, Cheolgyu; Franco, Jacopo; Kaczer, Ben; Grasser, T; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012)