Browsing Conference contributions by imec author "2d1c751c8dfd1e6c330303c0297849cd28a2ee51"
Now showing items 1-20 of 36
-
1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015) -
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Hsu, B.; Syshchyk, O.; Vais, Abhitosh; Yu, Hao; Alian, AliReza; Mols, Yves; Vondkar Kodandarama, Komal; Kunert, Bernardette; Waldron, Niamh; Simoen, Eddy; Collaert, Nadine (2021) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
Yu, Hao; Hsu, Brent; Vais, Abhitosh; Simoen, Eddy; Waldron, Niamh; Collaert, Nadine (2019-06) -
Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts
Huang, Yan-Hua; Porret, Clément; Hikavyy, Andriy; Rengo, Gianluca; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Heyns, Marc; Loo, Roger (2019) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
III-V/III-N technologies for next generation high-capacity wireless communication
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Boccardi, Guillaume; Cardinael, Pieter; Chauhan, Vikas; Desset, Claude; ElKashlan, Rana Y.; Khaled, Ahmad; Ingels, Mark; Kunert, Bernardette; Mols, Yves; O'Sullivan, Barry; Peralagu, Uthayasankaran; Pinho, Nelson; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Sinha, Siddhartha; Sun, Xiao; Vais, Abhitosh; Vermeersch, Bjorn; Yadav, Sachin; Yan, Dongyang; Yu, Hao; Zhang, Yang; Zhao, Ming; Van Driessche, Veerle; Gramegna, Giuseppe; Wambacq, Piet; Parvais, Bertrand; Peeters, Michael (2022) -
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Alian, Alireza; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Putcha, Vamsi; Zhao, Ming; ElKashlan, Rana Y.; Vermeersch, Bjorn; Yu, Hao; Bury, Erik; Khaled, Ahmad; Collaert, Nadine; Parvais, Bertrand (2022) -
Interpretation and modelling of dynamic-R-ON kinetics in GaN-on-Si HEMTs for mm-wave applications
Putcha, Vamsi; Yu, Hao; Franco, Jacopo; Yadav, Sachin; Alian, AliReza; Peralagu, Uthayasankaran; Parvais, Bertrand; Collaert, Nadine (2022) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond
Yu, Hao; Schaekers, Marc; Demuynck, Steven; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
Zhang, Jian; Yu, Hao; Schaekers, Marc; Horiguchi, Naoto; Wang, Linlin; Jiang, Yulong (2016)