Browsing Conference contributions by imec author "8f35f3081b0d4951a6c04a8f75dac660748cd13a"
Now showing items 1-20 of 107
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2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Koladi Mootheri, Vivek; Okuyama, Atsushi; Smets, Quentin; Schram, Tom; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2020) -
3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A near- & short-wave IR tunable InGaAs nanomembrane photoFET on flexible substrate for lightweight and wide-angle imaging applications
Li, Yida; Alian, AliReza; Huang, Li; Ang, Kah Wee; Lin, Dennis; Mocuta, Dan; Collaert, Nadine; Thean, Aaron V-Y (2018) -
Advanced channel materials for the semiconductor industry
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Lin, Dennis; Mitard, Jerome; Sioncke, Sonja; Waldron, Niamh; Witters, Liesbeth; Zhou, Daisy; Thean, Aaron (2015) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Dennis; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Beckhoff, Burkhard (2010) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
Analysis of border traps in high-k gate dielectrics on high-mobility channels
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Approaching Fermi level unpinning in oxide-In0.2Ga0.8As
Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, Dennis; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M. (2008) -
Atomic layer deposition of Gd2O3 and Sc2O3 on In0.53Ga0.47As: Interfacial layer engineering
Ameen, Mahmoud; Nyns, Laura; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Sioncke, Sonja; Feteha, Mohamed; Van Elshocht, Sven; Delabie, Annelies (2014) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012)