Browsing Conference contributions by imec author "4f7c405e2130e203d3178660ae69b5e0824c1d83"
Now showing items 21-40 of 96
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Flexible electronics
Rockele, Maarten; Vaisman Chasin, Adrian; Nag, Manoj; Kam, Benjamin; Ke, Tung Huei; Myny, Kris; Steudel, Soeren; Schols, Sarah; Genoe, Jan; Heremans, Paul (2012) -
Flexible electronics powered by amorphous oxide transistors on plastic
Heremans, Paul; Myny, Kris; Vaisman Chasin, Adrian; Cobb, Brian; van der Steen, Jan-Laurens; Tripathi, Ashutosh; Nag, Manoj; Steudel, Soeren; Gelinck, Gerwin; Genoe, Jan (2015) -
Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs
Vandemaele, Michiel; Kaczer, Ben; Tyaginov, Stanislav; Stanojevic, Zlatan; Makarov, Alexander; Vaisman Chasin, Adrian; Bury, Erik; Mertens, Hans; Linten, Dimitri; Groeseneken, Guido (2019) -
Fully integrated low static power organic CMOS circuits
Ke, Tung Huei; Muller, Robert; Kam, Benjamin; Rockele, Maarten; Steudel, Soeren; Vaisman Chasin, Adrian; Genoe, Jan; Myny, Kris; Heremans, Paul; Kjellander, Charlotte; van der Putten, Bas (2012) -
Fully integrated organic CMOS circuits on PEN-foil
Ke, Tung Huei; Muller, Robert; Kam, Benjamin; Rockele, Maarten; Vaisman Chasin, Adrian; Myny, Kris; Steudel, Soeren; Abdinia, Sahel; Cantatore, Eugenio; Genoe, Jan; van der Putten, Bas; Heremans, Paul (2013) -
Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices
Mukhopadhyay, Subhadeep; Franco, Jacopo; Vaisman Chasin, Adrian; Roussel, Philippe; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Linten, Dimitri; Thean, Aaron (2016) -
Gate stack engineering to enhance high- $j/metal gate reliability for DRAM I/O applications
O'Sullivan, Barry; Ritzenthaler, Romain; Simoen, Eddy; Dentoni Litta, Eugenio; Schram, Tom; Vaisman Chasin, Adrian; Linten, Dimitri; Horiguchi, Naoto; Machkaoutsan, Vladimir; Fazan, Pierre; Li, Y (2017) -
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Franco, Jacopo; Witters, Liesbeth; Vandooren, Anne; Arimura, Hiroaki; Sioncke, Sonja; Putcha, Vamsi; Vais, Abhitosh; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Subirats, Alexandre; Vaisman Chasin, Adrian; Ragnarsson, Lars-Ake; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine (2017) -
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016) -
Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features
Veloso, Anabela; Matagne, Philippe; Eneman, Geert; Mertens, Hans; Vaisman Chasin, Adrian; Simoen, Eddy; Horiguchi, Naoto (2020) -
Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features
Veloso, Anabela; Matagne, Philippe; Eneman, Geert; Mertens, Hans; Vaisman Chasin, Adrian; Simoen, Eddy; Horiguchi, Naoto (2020) -
Gate-All-Around nanowire & nanosheet FETs for advanced, ultra-scaled technologies (Keynote)
Veloso, Anabela; Matagne, Philippe; Jang, Doyoung; Huynh Bao, Trong; Vaisman Chasin, Adrian; Simoen, Eddy; Eneman, Geert; De Keersgieter, An; Mertens, Hans; Horiguchi, Naoto (2020) -
Gate-All-Around nanowire & nanosheet FETs for advanced, ultra-scaled technologies (Keynote)
Veloso, Anabela; Matagne, Philippe; Jang, Doyoung; Huynh-Bao, Trong; Vaisman Chasin, Adrian; Simoen, Eddy; Eneman, Geert; De Keersgieter, An; Mertens, Hans; Horiguchi, Naoto (2020) -
Gate-all-around transistors based on vertically stacked Si nanowires
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Mannaert, Geert; De Keersgieter, An; Vaisman Chasin, Adrian; Kubicek, Stefan; Dangol, Anish; Demuynck, Steven; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto (2017) -
Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
Arimura, Hiroaki; Wostyn, Kurt; Ragnarsson, Lars-Ake; Capogreco, Elena; Vaisman Chasin, Adrian; Conard, Thierry; Brus, Stephan; Favia, Paola; Franco, Jacopo; Mitard, Jerome; Demuynck, Steven; Horiguchi, Naoto (2019) -
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
Franco, Jacopo; Kaczer, Ben; Vaisman Chasin, Adrian; Bury, Erik; Linten, Dimitri (2018) -
Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions
Vaisman Chasin, Adrian; Franco, Jacopo; Ritzenthaler, Romain; Hellings, Geert; Cho, Moon Ju; Sasaki, Yuichiro; Subirats, Alexandre; Roussel, Philippe; Kaczer, Ben; Linten, Dimitri; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2016) -
Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Makarov, A.; Tyaginov, S. E.; Kaczer, Ben; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Hellings, Geert; Vexler, M. I.; Linten, Dimitri; Grasser, T. (2017) -
Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Makarov, A; Tyaginov, Stanislaw; Kaczer, Ben; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Hellings, Geert; Vexler, M.; Linten, Dimitri; Grasser, Tibor (2017) -
Impact of 1 $lm TSV via-last integration on electrical performance of advanced FinFET devices
Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Van der Plas, Geert; De Wachter, Bart; Vaisman Chasin, Adrian; Kaczer, Ben; Chiarella, Thomas; Mitard, Jerome; Demuynck, Steven; Beyer, Gerald; Beyne, Eric (2018)